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New LED photoetching development process

A lithography and process technology, applied in the new LED lithography and development process, can solve the problems of incomplete development, process defects, development, etc., to reduce the phenomenon of incomplete or over-development, accurate development process, simple operation Effect

Inactive Publication Date: 2014-05-14
马阁华
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  • Claims
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Problems solved by technology

[0002] The LED industry is one of the most important microelectronics fields in today's high-tech fields, and photolithography development is required in the LED manufacturing process. In the past technology, due to process defects, the development process could not be precisely controlled, resulting in incomplete development or excessive Development phenomenon

Method used

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Embodiment Construction

[0014] The principles and features of the present invention are described below, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0015] A new LED photolithography development process is characterized in that the method steps are as follows:

[0016] (1) First, fill the developing tank with developer solution, two parts each of 0.8% sodium hydroxide solution and 2.38% tetramethylammonium hydroxide aqueous solution, set the parameters of the developing machine, and let the swing arm of the developing machine swing up and down;

[0017] (2) The film is placed on the flower basket, and then the flower basket full of films is placed on the swing arm of the developing machine and shaken in the developing solution;

[0018] (3) Develop the N electrode with 0.8% sodium hydroxide solution: first develop in the first developing tank for 30 seconds, make the photoresist fully react with the develop...

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Abstract

The invention relates to a new LED photoetching development process which is characterized by comprising the following steps: filling a developing tank with developing solutions: two parts of 0.8% sodium hydroxide solution and two parts of 2.38% tetramethyl ammonium hydroxide aqueous solution; setting the parameters of a developer and swinging a swing arm of the developer up and down; placing wafers on a flower basket, putting the flower basket full of the wafers on the swing arm of the developer, and shaking in the developing solution; developing the N electrode with the 0.8% sodium hydroxide solution; developing ITO with 0.8% sodium hydroxide solution; developing the P and N electrodes with 2.38% tetramethyl ammonium hydroxide aqueous solution; taking the wafer out of the developing tank and cleaning with deionized water in a cleaning tank so that the water resistance reaches 5M(omega)*cm; and drying with a hot nitrogen dryer. The process disclosed by the invention is simple to operate, controls the developing process accurately and can effectively reduce the phenomenon of halfway or excessive developing.

Description

technical field [0001] The invention relates to a new LED photolithography and development process, which belongs to the field of LED production. Background technique [0002] The LED industry is one of the most important microelectronics fields in today's high-tech fields, and photolithography development is required in the LED manufacturing process. In the past technology, due to process defects, the development process could not be precisely controlled, resulting in incomplete development or excessive development phenomenon. Contents of the invention [0003] The invention aims at the shortcomings and provides a new LED photolithography and development process. [0004] The technical solution of the present invention to solve the above-mentioned technical problems is as follows: a new LED photolithography development process, characterized in that the steps of the method are as follows: [0005] (1) First, fill the developing tank with developer solution, two parts ea...

Claims

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Application Information

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IPC IPC(8): G03F7/30G03F7/32G03F7/40
Inventor 马阁华
Owner 马阁华
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