Method of forming memory device
A storage device and dielectric layer technology, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as poor memory performance, and achieve the effect of stable control circuits
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[0053] After research, the inventor found that the reason for the poor performance of the memory with the floating gate structure of nanocrystalline particles is:
[0054]When forming a traditional floating gate memory device, such as a SONOS memory, firstly a silicon oxide layer, a second polysilicon layer, an ONO dielectric layer and a first polysilicon layer are sequentially formed on a substrate. Next, a patterned mask layer is formed on the first polysilicon layer. Then, using the patterned hard mask as a mask, dry etching the first polysilicon layer, the ONO dielectric layer, the second polysilicon layer to the silicon oxide layer. Since the selectivity ratio of the second polysilicon layer to the silicon oxide layer is very high, it is easy to stop on the silicon oxide layer at the end of the dry etching process, thereby forming a control gate, an inter-gate dielectric layer, and a floating gate. However, in the first method of forming a storage device with a floating ...
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