Board-level interconnection packaging structure for radio-frequency micro electro mechanical device and packaging method thereof

Abstract

The invention discloses a board-level interconnection packaging structure for a radio-frequency micro electro mechanical device and a packaging method thereof. The board-level interconnection package structure comprises radio-frequency micro electro mechanical device chips, a convex point bridge, a packaging substrate and a sealing material, wherein the bottom parts of the radio-frequency micro electro mechanical device chips are adhered to the packaging substrate; chip electrodes are arranged on the upper sides of the radio-frequency micro electro mechanical device chips; substrate electrodes are arranged on the packaging substrate; the convex point bridge comprises a convex point bridge high-frequency substrate; a plurality of radio-frequency transmission wire electrodes are prepared on the convex point bridge high-frequency substrate; metal convex point balls are respectively arranged at two ends of each radio-frequency transmission wire electrode; the convex point bridge is inversely arranged and is bridged between the chip electrodes and the substrate electrodes, so that the metal convex point balls are connected with the corresponding substrate electrodes and the chip electrodes; a sealing material fills in an edge clearance between the convex point bridge high-frequency substrate and the packaging substrate. The board-level interconnection packaging structure achieves interconnection and package integration and is low in radio frequency loss, simple in structure and easy to implement.

Description

technical field [0001] The invention relates to a structure of a microelectronic component and a packaging method thereof, in particular to an external interconnect packaging structure of a radio frequency device and a packaging method thereof. Background technique [0002] External interconnection and packaging are important process links to fully realize the functions of radio frequency devices. The special requirements for packaging of RF MEMS devices are: (1) Airtight closed cavity, which provides a working space for the micro-mechanical structure in the device and protects it from external adverse factors such as water vapor or corrosive gas, polluting particles, external stress (2) Effective radio frequency signal interconnection requires as little radio frequency signal loss as possible, including insertion loss and reflection loss. The board-level interconnection methods of existing RF MEMS devices mainly include: (1) Wire bonding, that is, using heating, pressure o...

AI Technical Summary

Problems solved by technology

The board-level interconnection methods of existing RF MEMS devices mainly include: (1) Wire bonding, that is, using heating, pressure or ultrasonic methods to connect metal leads to the electrodes of the chip and the packaging substrate to realize the bonding between the chip and the packaging substrate. Electrical interconnection, its process is simple and easy to realize, but its radio frequency characteristics are poor, which has a great adverse effect on the overall performance of the device; (2) silicon via technology, that is, vertical conductive vias are made on the chip or packaging substrate and connected to electrodes, To realize the electrical interconnection between the chip and the packaging substrate, its radio frequency characteristics are better than the wire bonding method, but the process is complex and requires high technology and equipment

Its shortcoming is that in the existing RF MEMS device packaging technology, whether it is chip-level packaging or wafer-level packaging, the external interconnection and packaging of the device chip are mostly divided into two independent structural parts and two discrete parts. Process steps, which have high requirements on the design and process conditions of packaging and interconnection, resulting in low pass rate and high cost of products

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