Semiconductor luminous chip, semiconductor illuminating lamp and manufacture method thereof

Abstract

The invention relates to a semiconductor luminous chip, and a lamp using the chip. The chip comprises a substrate provided with a first surface and a second surface. The first surface of the substrate is provided with a semiconductor lamination layer at least comprising an n-type conductive layer, a luminous layer and a p-type conductive layer. The surface of the semiconductor lamination layer at least has an n-type electrode step and / or n-type electrode through-hole with a part of n-type conductive layer being exposed. All exposed and conductive surfaces and side surfaces of the semiconductor luminous chip are wrapped by at least one insulating layer. The surface of the insulating layer is provided with exposed at least one p-type electrode and at least one n-type electrode. The p-type electrode and the n-type electrode are insulated mutually and run through the insulating layer to be electrically connected with the p-type conductive layer and the n-type conductive layer respectively. According to the structure above, reflow soldering process is allowed to be utilized to directly weld the semiconductor luminous chip to lamp plates, lamp bars, lamp posts, LED supports or COB substrates for preparing various lamps or light sources. The advantages of simple structure and low production cost are achieved.

Description

technical field [0001] The present invention relates to a semiconductor light emitting chip, and further relates to a semiconductor light emitting chip structure suitable for reflow soldering. Background technique [0002] With the improvement of luminous efficiency and the reduction of manufacturing cost of semiconductor light-emitting chips, semiconductor light-emitting chips have been widely used in fields such as backlight, display and lighting. [0003] A common semiconductor light-emitting chip structure such as figure 1 As shown, it includes a sapphire substrate 11, an n-type conductive layer 12, a light-emitting layer 13, a p-type conductive layer 14, an n-type electrode 15, a p-type electrode 16, conductive lines 19a, 19b, an insulating layer 110, pads 121a, 121b , LED bracket 120, crystal bonding adhesive 120a. In order to reduce the shading effect and increase the effective light-emitting area, the size of the electrodes 15 and 16 is reduced as much as possible,...

AI Technical Summary

Problems solved by technology

Repeating the fixation three times not only wastes a lot of raw materials and increases the weight of the lamp, but also adds many insignificant process links and production equipment, which makes the comprehensive manufacturing cost of the lamp high.

Poor heat dissipation will cause the light-emitting chip 380 to decay faster and shorten the service life of the whole lamp

Images