High-voltage LDMOS device based on BCD process and manufacturing process

A high-voltage and process technology, applied in the field of high-voltage LDMOS devices and manufacturing processes, can solve the problems of low performance and large on-resistance of LDMOS devices, and achieve the effects of reducing on-resistance, small length of withstand voltage region, and improving withstand voltage.

Inactive Publication Date: 2014-06-04
CHENGDU LIXIN MICROELECTRONICS SCI & TECH
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The substrate material of the existing high-voltage LDMOS devices based on BCD process is p-type substrate, and N-type epitaxial layer is grown on the P-type substrate, and singleresurf

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage LDMOS device based on BCD process and manufacturing process
  • High-voltage LDMOS device based on BCD process and manufacturing process
  • High-voltage LDMOS device based on BCD process and manufacturing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be further described below in conjunction with accompanying drawing:

[0027] like figure 2 As shown, the high-voltage LDMOS device based on the BCD process of the present invention includes a substrate, the substrate is an N-type substrate N-substrate, and the N-type substrate N-substrate is a P-type buried layer P-bury, P The N-type thin epitaxial layer is on the buried layer P-bury, the N-well N-well is located on one side of the N-type thin epitaxial layer, and the side of the N-well N-well close to the polysilicon poly is a P-type layer covered by a field oxide layer oxide Lightly doped top layer P-top, the other side is N-type injection layer n+, N-type injection layer n+ extends upward to the drain drain, P well P-well is located on the other side of N-type thin epitaxial layer, P well P- The middle and upper part of the well is the p-type field area P-field, and the p-type field area P-field has short-circuited N-type injection layer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a high-voltage LDMOS device based on a BCD process and a manufacturing process. The high-voltage LDMOS device comprises a substrate, the substrate is an N-type substrate, a P-type buried layer is arranged on the N-type substrate, an N-type thin epitaxial layer is arranged on the P-type buried layer, an N-trap is arranged on one side of the N-type thin epitaxial layer, a P-type light dope top layer covered with a field oxidation layer is arranged on the side, close to polycrystalline silicon, of the N-trap, an N-type injection layer is arranged on the other side of the N-trap, the N-type injection layer extends upwards to a drain electrode, a P-trap is arranged on the other side of the N-type thin epitaxial layer, a p-type field area is arranged on the upper middle portion of the P-trap, a short-circuit N-type injection layer and a short-circuit P-type injection layer are arranged on the p-type field area, the connecting position of the short-circuit N-type injection layer and the short-circuit P-type injection layer extends upwards to a source electrode, a grid electrode oxidation layer is arranged at the connecting position of the N-trap and the P-trap, the polycrystalline silicon is arranged on the grid electrode oxidation layer, and the polycrystalline silicon is externally connected with a grid electrode. The length of a voltage withstanding area of the LDMOS device is small, and the on-resistance of the device can be greatly reduced under the condition of keeping a breakdown voltage unchanged.

Description

technical field [0001] The invention relates to a high-voltage LDMOS device and a manufacturing process, in particular to a high-voltage LDMOS device and a manufacturing process based on a BCD process. Background technique [0002] BCD is a monolithic integration process technology, which can make bipolar, CMOS and DMOS devices on the same chip, called BCD process. LDMOS is laterally diffused metal oxide semiconductor. High-voltage LDMOS devices are commonly used in high-voltage power integrated circuits. They are used to meet the requirements of high-voltage resistance and power control. They are often used in radio frequency power circuits. [0003] The substrate material of the existing high-voltage LDMOS devices based on BCD process is p-type substrate, and N-type epitaxial layer is grown on the P-type substrate, and singleresurf technology is used to improve the withstand voltage. The performance of LDMOS devices with this structure is not good. High, the on-resistance...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0615H01L29/66681H01L29/7816
Inventor 胡浩宁小霖
Owner CHENGDU LIXIN MICROELECTRONICS SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap