Solar cell with three gate electrode structures

A solar cell and grid electrode technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of large slurry consumption and inferior electrical performance as triple grid batteries, etc., to reduce unit consumption, reduce grid shading area, The effect of reducing power loss

Inactive Publication Date: 2014-06-04
SHAANXI TIANHONG SILICON IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the battery grid structure, each manufacturer also has different production experience and technology. The mature production method in the market at this stage is to use two busbars or three grids without gradient grid design on the front. In terms of electrical performance, it is not as good as the three-grid battery, and the non-gradient three-grid battery consumes a lot of slurry

Method used

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  • Solar cell with three gate electrode structures
  • Solar cell with three gate electrode structures
  • Solar cell with three gate electrode structures

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] For a 156X156 monocrystalline silicon cell, there are 3 main grid lines and 80 auxiliary grid lines, the distance between adjacent main grid lines is 52mm, the width b of the main grid lines is 1.5mm, and the two The length of the tapered portion c at the end is 8mm, and the length of the tapered end a is 0.8mm. At the junction of the main grid and the sub-gate, the width e of the widest part of the sub-gate is 75 μm, the width d of the narrowest part is 45 μm, the length of the gradient f is 7 mm, the two ends of the sub-gate are not connected, and the distance between two adjacent sub-gates is 1.94mm. The distance from the end of the grid line to the side is 1.2mm.

[0023] The three main grid lines on the back have a width of 3mm and a spacing of 52mm, with a triangle direction mark, a width of 1mm, a length of 2mm, and a distance of 1.8mm to the side. The distance from the back field to the edge of the wafer is 1mm.

Embodiment 2

[0025] For a 156X156 monocrystalline silicon cell, there are 3 main grid lines, 80 auxiliary grid lines, the distance between adjacent main grid lines is 52mm, the width b of the main grid lines is 1.5mm, and the two ends of the main grid lines The length of the gradual part c is 8 mm, and the length of the gradual end a is 0.8 mm. At the junction of the main grid and the sub-gate, the width e of the widest part of the sub-gate is 90 μm, the width d of the narrowest part is 60 μm, the length of the gradient f is 7 mm, the two ends of the sub-gate are not connected, and the distance between two adjacent sub-gates is 1.94mm. The distance from the end of the grid line to the side is 1.2mm.

[0026] The width of the three main grid lines on the back is 3mm, the spacing is 52mm, there is a triangle direction mark, the width is 1mm, the length is 2mm, and the distance to the side is 1.8mm. The distance from the back field to the edge of the wafer is 1mm.

Embodiment 3

[0028] For a 156X156 monocrystalline silicon cell, there are 3 main grid lines and 78 auxiliary grid lines, the distance between adjacent main grid lines is 52mm, the width b of the main grid lines is 1.5mm, and the The length of the tapered portion c at the end is 8mm, and the length of the tapered end a is 0.8mm. At the junction of the main grid and the sub-gate, the width e of the widest part of the sub-gate is 120 μm, the width d of the narrowest part is 90 μm, the length of the gradient f is 7 mm, the two ends of the sub-gate are not connected, and the distance between two adjacent sub-gates is 1.99mm. The distance from the end of the grid line to the side is 1.2 mm.

[0029] The width of the three main grid lines on the back is 3mm, the spacing is 52mm, there is a triangle direction mark, the width is 1mm, the length is 2mm, and the distance to the side is 1.8mm. The distance from the back field to the edge of the wafer is 1mm.

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Abstract

The invention relates to a solar cell with three gate electrode structures. A front face gate line structure comprises three symmetrical primary gate lines and a plurality of evenly distributed secondary gate lines perpendicular to the primary gate lines, one primary gate line is located on the center line of a silicon wafer, and the two ends of each primary gate line and the part, connected with the corresponding primary gate line, of each secondary gate line are respectively of a gradual change type structure. A back face structure comprises three primary gate lines corresponding to the front face gate lines, and asymmetric direction signs smaller than the width of the gate lines exist in the grate line direction. According to the gradual change type structures of the two ends of the primary gate lines, the two ends of each primary gate line gradually narrow down and are of a trapezoid gradual change stricture. According to the gradual change stricture of each secondary gate line, in the junction of the secondary gate line and the corresponding primary gate line, the width of the position, close to the corresponding primary gate line, of the secondary gate line is large, the secondary gate line gradually narrows down when far away from the corresponding primary gate line, and when the secondary gate line reaches a certain length, the width of the secondary gate line is the smallest and will no longer change. The solar cell with the three gate electrode structures can lower cell cost, improve the efficiency of solving problems, and improve the efficiency of a battery piece to a certain extent.

Description

1. Technical field [0001] The invention relates to a solar cell with a triple grid electrode structure, belonging to the field of solar cell manufacturing. 2. Background technology [0002] At present, the development of new energy sources is imminent in the world, and people's demand for renewable energy is increasing, especially the utilization of solar energy. With the maturity of solar cell technology, solar cells have become the most concerned part in daily life and production, and crystalline silicon solar cells can effectively collect and utilize solar energy, and have already occupied a considerable proportion in the market. For the production of solar cells, the design of the battery grid is very important, which directly determines the ability of the cells to collect and utilize solar energy and the cost of the cells. For the battery grid structure, each manufacturer also has different production experience and technology. The mature production method in the marke...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224
CPCH01L31/022433Y02E10/50
Inventor 杨文伟刘松林薛涛李咏梅刘世锋郑晓东关纪斌
Owner SHAANXI TIANHONG SILICON IND
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