Method for forming side wall silicon oxide protective layer
A technology of silicon oxide and protective layer, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem of difficult deposition of uniform sidewall silicon oxide film, etc., to achieve good uniformity and improve the effect of yield
Inactive Publication Date: 2014-06-18
WUHAN XINXIN SEMICON MFG CO LTD
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[0003] The technical problem to be solved by the present invention is to provide a method for forming a sidewall silicon oxide protective layer to solve the problem in the prior art that it is difficult to deposit a sidewall silicon oxide film with satisfactory uniformity under low temperature conditions
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[0019] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0020] figure 1 It is a schematic flow chart of the method for forming a sidewall silicon oxide protective layer in this embodiment, figure 2 A schematic diagram of the structure of a semiconductor, such as figure 1 figure 2 As shown, the method of the present embodiment includes the following steps:
[0021] S101 provides a semiconductor structure 1; the semiconductor structure 1 includes a P well region 3 and an N well region 4 disposed on a silicon substrate 2, and a shallow trench isolation trench 5 partially embedded in the well region, the shallow trench The isolation groove 5 is arranged between the P well region 3 and the N well region 4; a plurality of polycrystalline gates 6 are arranged on the well r...
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The invention relates to the manufacturing field of semiconductor integrated circuits, in particular to a method for forming a side wall silicon oxide protective layer. The method for forming the side wall silicon oxide protective layer comprises the steps that firstly, a semiconductor structure is provided; secondly, microwaves are introduced into a plasma chamber by using a planar antenna provided with a plurality of gaps, oxygen and argon of which the volume ratio is 1%-5% are supplied, plasma of the oxygen and the argon is produced in the plasma chamber, plasma oxidation is conducted on the semiconductor structure by using the plasma of the oxygen and the argon, and a side wall oxidation film layer is formed on the surface of the semiconductor structure. By means of the method, uniformity of the deposited side wall silicon oxide protective layer is good, depositing temperature is far lower than 800 DEG C-1100 DEG C required by a common furnace tube, the requirement for a low-temperature deposition manufacture procedure of a silicon dioxide film in the 65-nanometer technology and technologies below 65 nanometers is met, and the rate of good products is increased effectively.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for forming a sidewall silicon oxide protection layer. Background technique [0002] In the semiconductor integrated circuit manufacturing process, the spacer is a necessary structure for the production of semiconductor CMOS devices, which can not only protect the gate, but also reduce the short channel effect. Traditional deposition materials mostly use a composite layer of silicon dioxide and silicon nitride (silicon nitride is the outer layer), and when it comes to the 65nm process and below, the requirements for the deposition of silicon dioxide films are getting higher and higher. , not only requires a low-temperature deposition process (less than 300-600 ° C), but also requires good uniformity. Generally speaking, although the deposition uniformity of the silicon dioxide film deposited by ordinary furnace tubes is good, the deposition...
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IPC IPC(8): H01L21/28H01L21/316
CPCH01L21/823864H01L21/28167H01L21/823857
Inventor 洪齐元黄海
Owner WUHAN XINXIN SEMICON MFG CO LTD