ALD (atomic layer deposition) equipment and reaction source diffusion distribution and control method applied to ALD equipment

A control method and diffusion distribution technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problem that ALD equipment cannot accurately measure the diffusion distribution of reaction sources, and cannot well control the interaction of different reaction sources. The effect of isolation and other issues can be achieved to save process time and improve speed

Active Publication Date: 2014-06-25
厦门紫硅半导体科技有限公司
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, existing ALD equipment cannot accurately measure the diffusion distribution of re...

Method used

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  • ALD (atomic layer deposition) equipment and reaction source diffusion distribution and control method applied to ALD equipment
  • ALD (atomic layer deposition) equipment and reaction source diffusion distribution and control method applied to ALD equipment
  • ALD (atomic layer deposition) equipment and reaction source diffusion distribution and control method applied to ALD equipment

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Embodiment Construction

[0032] The ALD device of the present invention is an openable and closable cavity, including a cover plate and a main body chamber matched with the cover plate. There is a carrier tray in the main chamber, which is used to carry components that need to be subjected to an ALD process. At least two gas path unit groups are arranged on the inner surface of the cover plate, each gas path unit group includes at least one gas path unit, and each gas path unit is used for passing gas when the ALD equipment is closed, and passing the gas The gas is confined in the area between the lower part of the gas circuit unit and the carrier plate. When the cover plate is closed with the main body chamber, there is no contact between each air circuit unit and the carrying plate, that is, there is a gap for air flow to pass through. Each of the at least two gas circuit unit groups is used to feed different reaction source gases.

[0033] Each of the air path units includes a plurality of airflo...

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Abstract

The invention discloses ALD (atomic layer deposition) equipment and a reaction source diffusion distribution and control method applied to the ALD equipment. The ALD equipment comprises a cover plate and a main body chamber matched with the cover plate, at least two gas circuit unit groups are arranged on the inner surface of the cover plate, each gas circuit unit group comprises at least one gas circuit unit, at least two gas circuit unit groups are used for introducing different reaction source gases; each gas circuit unit comprises a first gas flow channel, a first spacer layer, a second gas flow channel and a second spacer layer; the first gas flow channel is used for introducing the reaction source gas; the second gas flow channel is used for pumping out unreacted reaction source gas; the first spacer layer is arranged between the first gas flow channel and the second gas flow channel, the second spacer layer is arranged between the second gas flow channel and a third gas flow channel. The ALD equipment can increase speed of atomic layer epitaxy, save time of a single technology and adjust growth velocity of the atomic layer epitaxy.

Description

technical field [0001] The present invention relates to the field of microelectronic material manufacturing, in particular to a fast atomic layer deposition (Atomic layer deposition or ALD) device and a method for detecting and controlling the diffusion distribution of a reaction source inside a cavity. Background technique [0002] A dew point meter is an instrument that can directly measure the dew point temperature. Let a mirror surface cool down in the humid air of the sample until the moment when dew drops (or ice crystals) appear on the mirror surface, measure the average temperature of the mirror surface, which is the dew (frost) point temperature. The dew (frost) point temperature is related to the moisture content in the atmosphere. The value tested by the dew point meter is the temperature value. The higher the temperature value, the higher the moisture content in the atmosphere, and the lower the temperature value, the lower the moisture content in the atmosphere...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/52
Inventor 赵万顺张峰王雷曾一平
Owner 厦门紫硅半导体科技有限公司
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