Molybdenum-alloy-film and indium-oxide-film etching-solution composition

Abstract

The present invention relates to an etching-solution composition for a molybdenum alloy film and an indium oxide film, and relates to an etching-solution composition for a molybdenum alloy film, an indium oxide film or a multilayer film of a molybdenum alloy film and an indium oxide film, wherein the composition comprises, with respect to the total weight of the composition, between 5 and 25 wt.% of hydrogen peroxide, between 0.1 and 2 wt.% of a corrosion inhibitor, between 0.1 and 2 wt.% of a fluorine-containing compound, between 0.1 and 2 wt.% of a chlorine-containing compound, between 0.1 and 5 wt.% of a hydrogen peroxide stabilizer and water to make the total weight of the entire composition up to 100 wt.%. The aim of the present invention is to provide an etching-solution composition which controls the production of precipitates when etching a molybdenum alloy film, an indium oxide film or a multilayer film of a molybdenum alloy film and an indium oxide film used in a TFT-LCD pixel electrode, such that the durability of etching equipment can be improved and the corrosion of copper used as the source and drain of a lower TFT is minimised.

Description

technical field [0001] The invention relates to a molybdenum alloy film and an indium oxide film used for molybdenum alloy film and indium oxide film used on TFT-LCD pixel electrodes. An etchant composition for multiple films of an oxide film or a molybdenum alloy film and an indium oxide film. Background technique [0002] Single films such as molybdenum alloy films and indium oxide films or multiple films of molybdenum alloy films and indium oxide films are used on pixel electrodes of semiconductor devices and liquid crystal displays such as TFT-LCDs. The pixel electrode is generally laminated on the substrate by sputtering and other methods, and photoresist is evenly applied on it, and then imaged after light irradiation through a thin film engraved with a pattern, so that the required pattern photoresist Imaging is completed by a series of photolithography processes such as dry etching or wet etching, after displaying patterns on the metal film under the photoresist, an...

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Problems solved by technology

[0003] When using the same etchant to etch the above-mentioned molybdenum alloy film and indium oxide film, although the manufacturing process can be simplified, generally speaking, the chemical resistance of the molybdenum alloy film is good, and there is a problem that wet etching is not easy; in addition, in order to etch the indium oxide film The oxalic acid series etchant used in the film cannot etch the molybdenum alloy film

[0004] In the prior art, Korean Patent Publication No. 2008-0045853, Patent Publication No. 2008-0045854, and Patent Publication No. 2008-0107502 disclose a kind of etching solution, but using the etching solution of prior art to molybdenum When the alloy film and the indium oxide film are etched, a chemical reaction occurs between the etchant and the metal film, and precipitates are generated, causing problems such as defective pixels

In addition, there are problems such as reduced etching equipment construction time and durability during continuous use.

In addition, the corrosion suppression performance of the copper film used for the source and drain of the lower TFT is not complete, so that a part of the copper mold is corroded, and the yield of the whole part is low, etc.

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