Method for improving emission stability of high-temperature electrons of SiC field emission cathode materials

A field emission cathode, electron emission technology, applied in nanotechnology for materials and surface science, cold cathode manufacturing, discharge tube/lamp manufacturing, etc., to achieve the effect of excellent high temperature electron emission stability

Active Publication Date: 2014-07-16
NINGBO UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

[0004] The technical invention expects to solve the problem of how to improve the high temperature electron emission stability of SiC field emission cathode materials

Method used

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  • Method for improving emission stability of high-temperature electrons of SiC field emission cathode materials
  • Method for improving emission stability of high-temperature electrons of SiC field emission cathode materials
  • Method for improving emission stability of high-temperature electrons of SiC field emission cathode materials

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Embodiment 1

[0032] The initial raw material is polysilaborazane (chemical composition: Si 0.64 BC 0.78 N 1.53 o 0.25 ), under the protection of an Ar atmosphere with a purity of 99.9%, at 260 ° C for 30 min for thermal crosslinking and curing. Put the solidified SiBCN solid into a nylon resin ball mill tank, and ball mill it into powder. Cut carbon paper 5x5 cm (length x width), in 0.05 mol / L Co(NO 3 ) 3 (Purity: 99%) soak in ethanol solution for 1 minute, take it out and put it in the air environment to dry naturally. Weigh 0.3 mg SiBCN powder, place it at the bottom of the graphite crucible, and place the impregnated carbon paper on the top of the graphite crucible, and place them together in a graphite resistance heating atmosphere sintering furnace. The atmosphere furnace is first evacuated to 10 -4 Pa, and then filled with high-purity Ar gas (purity 99.9%) until the pressure is one atmosphere (~0.11Mpa), and then the pressure is constant. Then the temperature was raised from...

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Abstract

Provided is a method for improving emission stability of high-temperature electrons of SiC field emission cathode materials. The method comprises the following specific steps that 1) heat preservation is carried out on organic precursor polyborosilazane in an atmosphere sintering furnace for 30 min at the temperature of 260 DEG C for thermo crosslinking curing, and then the organic precursor polyborosilazane is smashed through a ball mill; 2) carbon paper is adopted as a substrate, the carbon paper is arranged in 0.05 mol/L Co(NO3)2 ethanol solutions with the purity of 99 percent for immersion treatment, and the carbon paper is taken out and naturally aired for standby application; 3) smashed powder is arranged at the bottom of a graphite crucible, the carbon paper after the immersion treatment is arranged at the top of the graphite crucible, and the powder and the carbon paper are placed in an atmosphere protecting furnace together; 4) the powder is heated to 1550 DEG C from the indoor temperature at the speed of 25 DEG C/min under protection of Ar atmosphere with the purity of 99.9 percent; 5) the temperature is reduced to 1100 DEG C from 1550 DEG C at the speed of 15 DEG C/min; 6) the powder is cooled to the indoor temperature along with the furnace, and in-situ B doped SiC nanowires are manufactured; 7) the SiC nanowires are applied to a field emission cathode for electron emission performance detection and analysis. Through B-site doping, the emission stability of the high-temperature electrons of the SiC field emissioncathode materials is effectively improved.

Description

technical field [0001] The invention relates to a method for improving the high-temperature electron emission stability of a SiC field emission cathode material, which belongs to the technical field of material preparation. Background technique [0002] SiC low-dimensional nanomaterials have excellent electron emission properties that traditional bulk materials cannot possess. With the continuous progress and development of science and technology, its turn-on electric field has been able to be reduced to several Vμm -1 , even below 1Vμm -1 . If using Al 2 o 3 The turn-on and threshold electric fields of nanoparticle-modified tubular SiC are 2.4 V μm, respectively -1 and 5.37 Vμm -1 ; The turn-on electric field and threshold electric field of Al-doped SiC nanowires are only 0.55~1.54 Vμm -1 and 1.25~1.88 Vμm -1 ; The turn-on electric field of SiC / Si nanoheterostructure is 2.6 V μm -1 , the turn-on electric field of arrayed SiC nanowires can be as low as 0.7-1.5 Vμm ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J9/02B82Y30/00
Inventor 杨为佑杨阳王霖尉国栋郑金桔高凤梅杨祚宝尚明辉
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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