Multi-junction Iii-v Solar Cell And Manufacturing Method Thereof
A multi-junction solar cell, III-V technology, applied in the field of physical science, can solve the problem of high cost of inverted metamorphic solar cells
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[0020] A germanium lattice-matched or pseudomorphic germanium multijunction III-V solar cell structure on a compliant silicon substrate is disclosed, in which silicon is used as the bottom cell. Growing III-V based cells on silicon is advantageous for a number of reasons including: (1) the abundance of Si substrates, (2) the lower cost of silicon compared to germanium and III-V semiconductor materials, ( 3) Mechanical stability, and (4) Silicon has the best bandgap for fabricating high-efficiency tandem junction solar cells. Lattice mismatch between silicon and III-V semiconductor materials is an obstacle to the realization of III-V solar cells on tandem silicon, where silicon serves as the bottom junction. Due to the challenging nature of growing III-V semiconductor materials directly on silicon over large areas as opposed to small patterned areas, researchers have attempted to use graded SiGe buffer layers as templates for growing III-V on silicon substrates. In principle a...
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