Optoelectronic sensor system
A photoelectric sensor, sensor layer technology, applied in fluorescence/phosphorescence, material excitation analysis, etc., can solve problems such as high cost, hindering miniaturization, and hindering the manufacture of reading systems
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[0033] The incident angle of light rays entering the first glass carrier is preferably greater than the critical angle of total reflection between glass and PDMS, ie greater than 69°. (Refractive index: glass: n1=1.52, PDMS: n2=1.42->total reflection angle: α=arcsin(n2 / n1)=69.1°)
[0034] A photoelectric sensor system with this structure is characterized by the small size of this photoelectric sensor system, that is, the thickness of the first glass carrier can be, for example, 50 μm-200 μm, the thickness of the first glass carrier and the third glass carrier and the PDMS interlayer For example, it can be approximately 300 μm, and the overall thickness of the sensor can be, for example, approximately 1 mm.
[0035] The light source for excitation can be a laser, LED or OLED with a wavelength of 300nm-650nm.
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