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Method for avoiding film poisoning caused by ion implantation layer rear photoresist

An ion implantation and thin film technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of affecting yield, thin film deposition, and residues that cannot be completely removed, so as to avoid film poisoning and yield Enhanced effect

Inactive Publication Date: 2014-07-30
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
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Problems solved by technology

[0005] For the problem of chemical residues in this kind of photoresist, the industry currently adopts wet cleaning to remove them, but many residues cannot be completely removed after WET, which will affect the subsequent film deposition and affect the final good quality. Rate

Method used

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  • Method for avoiding film poisoning caused by ion implantation layer rear photoresist
  • Method for avoiding film poisoning caused by ion implantation layer rear photoresist
  • Method for avoiding film poisoning caused by ion implantation layer rear photoresist

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Embodiment Construction

[0020] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0021] Figure 4 to Figure 8 Each step of the method for avoiding film poisoning caused by photoresist after ion-implantation layer according to a preferred embodiment of the present invention is schematically shown.

[0022] Specifically, such as Figure 4 to Figure 8 As shown, the method for avoiding film poisoning caused by photoresist after ion implantation layer according to a preferred embodiment of the present invention includes:

[0023] Form the photoresist layer 11 of the ion implantation layer directly on the dielectric film 10, and utilize the photoresist layer 11 of the ion implantation layer to perform ion implantation, such as Figure 4 shown; for example, the dielectric film 10 may be a silicon oxide layer or a silicon nitride ...

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Abstract

The invention provides a method for avoiding film poisoning caused by an ion implantation layer rear photoresist. The method comprises the steps of directly forming an ion implantation layer photoresist layer on a dielectric film and utilizing the ion implantation layer photoresist layer to carry out ion implantation; carrying out a process of removing the ion implantation layer photoresist layer after the ion implantation; completely or partially removing the dielectric film in direct contact with the ion implantation layer photoresist layer after carrying out the process of removing the ion implantation layer photoresist layer; growing an equivalent dielectric film having the same material as the dielectric film again; and depositing another dielectric layer on the equivalent dielectric film. By applying the method, the problem of film poisoning caused by the photoresist can be effectively solved, and contributions are made to yield improvement.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a method for improving film poisoning caused by ion implantation layer photoresist in the field of integrated circuit manufacturing technology. Background technique [0002] With the development of integrated circuit technology, it is necessary to meet more and more complex requirements, and the composition ratio of raw materials used in various processes is also becoming more and more complex. For example, the photoresist composition of the ion implantation layer, in order to better block ions Injection, its composition will become more and more complex will become an inevitable trend. [0003] However, due to the complexity of the composition and the increase of chemicals, more and more unavoidable problems have been brought to the process other than the process. Formation of chemical residues that are difficult to remove and affect subsequ...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/265
CPCH01L21/266H01L21/31111
Inventor 范荣伟何广智陈宏璘龙吟倪棋梁
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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