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A simple and efficient preparation method of zinc sulfide semiconductor thin film

A technology of zinc sulfide and semiconductor, which is applied in the direction of zinc sulfide, liquid-coating devices on the surface, coatings, etc., can solve the problems of strict experimental conditions, expensive, long reaction time, etc., and achieve high crystal quality, low cost, and high composition easy to control effects

Active Publication Date: 2015-08-19
菏泽瑞诚塑料包装有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods usually require expensive instruments, stringent experimental conditions, and / or long reaction times

Method used

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  • A simple and efficient preparation method of zinc sulfide semiconductor thin film
  • A simple and efficient preparation method of zinc sulfide semiconductor thin film
  • A simple and efficient preparation method of zinc sulfide semiconductor thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The aqueous solution of sodium xanthate and zinc nitrate is reacted in a single step to generate zinc xanthate precipitate, and then filtered, washed, and dried to obtain zinc xanthate precursor powder. Weigh 0.019 g of zinc ethyl xanthate powder, dissolve and disperse in 2 ml of pyridine to form a uniform transparent solution, drop the transparent solution onto a glass slide, anneal for 120 minutes at a temperature of 110°C in an air atmosphere, and cool Take out the glass sheet at room temperature, and you can find that a uniform film is formed on the glass sheet.

[0025] attached figure 1 It is the X-ray diffraction spectrum of the zinc sulfide thin film that embodiment 1 prepares, can confirm that this is the zinc sulfide of cubic structure by figure.

Embodiment 2

[0027] Take 10 mL of ethanol and 0.40 g of sodium hydroxide, mix and stir until the sodium hydroxide is completely dissolved, add 1.4 mL of carbon disulfide and stir for 2 hours. Then 0.136 g of zinc chloride was dissolved in 50 mL of acetone, added to the above solution and stirred for 2 hours, and the filtrate was filtered and volatilized naturally at room temperature to obtain the precursor powder of zinc ethyl xanthate, a coordination polymer. Weigh 0.28g of zinc ethyl xanthate powder, dissolve and disperse in 2ml of 2-picoline to form a uniform and transparent solution, and spin-coat the transparent solution onto a silicon wafer at a temperature of 350°C under a nitrogen atmosphere Anneal for 5 minutes, cool to room temperature and take out the silicon wafer. It can be found that a uniform film is formed on the silicon wafer.

[0028] attached figure 2 The scanning electron micrograph of the zinc sulfide film prepared in Example 2 shows that the zinc sulfide film is eve...

Embodiment 3

[0030] The aqueous solution of potassium xanthate and zinc chloride is reacted in a single step to form a zinc xanthate precipitate, and then filtered, washed, and dried to obtain a zinc xanthate precursor powder. Weigh 0.45g of zinc ethyl xanthate powder, dissolve and disperse in 1 ml of pyridine to form a uniform transparent solution, drop the transparent solution onto a plastic sheet, anneal at 160°C for 25 minutes under vacuum, and cool to Take out the plastic sheet at room temperature, and you can find that a uniform film is formed on the plastic sheet.

[0031] attached image 3 The transmission electron micrograph of the zinc sulfide thin film prepared for Example 3 shows that the zinc sulfide nanoparticles are mostly spherical, and the diameter of the zinc sulfide nanoparticles is about 2-3 nanometers.

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Abstract

The invention belongs to the field of semiconductor materials and devices, and particularly relates to a simple and efficient preparation method for a zinc sulfide semiconductor film. The method comprises the steps of (1) synthetizing a single-source xanthogenic acid zinc precursor, (2) preparing a single-source xanthogenic acid zinc precursor solution, and (3) preparing the zinc sulfide film. The method is simple and easy to implement. Raw materials are cheap and easy to get. The prepared zinc sulfide film is high in crystal quality and continuous, uniform and compact in appearance, can be firmly and reliably combined with a substrate and can also be prepared on a substrate with a complex shape, ingredients of the zinc sulfide film are easy to control, and the surface of the zinc sulfide film is smooth and bright. By means of the method, a common complex process with many steps or a long process cycle or expensive high-vacuum equipment or the like can be eliminated. The method is low in cost and suitable for industrial large-scale production. The prepared zinc sulfide film can be applied to photoelectric devices such as solar cells, flat-panel displayers and light-emitting diodes.

Description

technical field [0001] The invention belongs to the field of inorganic materials, in particular to a simple and efficient preparation method of a zinc sulfide semiconductor thin film. Background technique [0002] Metal sulfides have excellent photoelectromagnetic properties and catalytic properties, and have become a research hotspot in the field of inorganic materials. Among them, zinc sulfide (ZnS) is one of the widely researched and applied materials among II-VI compounds. ZnS is an important II-VI group direct bandgap wide-bandgap semiconductor material. The bandgap at room temperature is about 3.7 eV, and it has a high exciton binding energy (40 meV). It can be used in short-wavelength semiconductor lasers, light-emitting diodes, ultraviolet The field of short-wavelength optoelectronic devices such as photodetectors has huge potential [0003] Value. ZnS can also replace toxic CdS as an important window layer material in the structure of CuInGaSe2 (CIGS) thin film s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B05D7/24C01G9/08
Inventor 夏国栋王素梅
Owner 菏泽瑞诚塑料包装有限公司
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