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Dual-channel nozzle structure capable of controlling reactant uniform distribution

A uniformly distributed, dual-channel technology, applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems affecting the quality of crystal growth, and it is difficult to overcome the uneven distribution of precursors, so as to improve the uniformity, Meet the effect of uniform growth

Active Publication Date: 2014-08-13
SINO NITRIDE SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention patent CN201310542018X discloses a precursor flow field control rod. By adding a control rod with different control ends in the center of the precursor GaCl channel, the GaCl flow field of the precursor is intervened, and it is expected to improve the uniformity of the precursor above the substrate. However, the experimental research found that the uniformity of the GaCl precursor was improved to a certain extent after the introduction of the control rod, but side reaction deposits occurred on the wall of the nozzle, which affected the quality of crystal growth.
Therefore, it is still difficult to overcome the problem of uneven distribution of precursors (such as GaCl) on the substrate to meet the high-quality growth of GaN wafers on a large effective substrate area (the precursors in this patent CN201310542018X are reactants)

Method used

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  • Dual-channel nozzle structure capable of controlling reactant uniform distribution
  • Dual-channel nozzle structure capable of controlling reactant uniform distribution
  • Dual-channel nozzle structure capable of controlling reactant uniform distribution

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Experimental program
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Effect test

Embodiment 1

[0019] Such as figure 1 As shown, a dual-channel spout structure with controllable reactants evenly distributed in the present invention is mainly composed of an equal-diameter cylinder 102 and a variable-section outer sleeve 105; the outer sleeve 105 and the cylinder 102 are coaxial; The variable cross-section outer sleeve 105 includes an upper cylinder and a lower skirt body expansion section, the cross section of the skirt body expansion section gradually expands from top to bottom; the outer wall of the cylinder 102 and the inner wall of the variable cross-section outer sleeve 105 form a first channel 104, the reactant gas 106 passed into the first channel 104 is GaCl, the hollow part of the cylinder 102 is the second channel 101, and the gas 103 passed into the second channel 101 is GaCl and N 2 The mixed gas, adjust GaCl and N 2 The flow ratio of the gas in the second channel 101 and the gas flow in the first channel 104 optimizes the uniformity of the radial distributi...

Embodiment 2

[0021] Such as figure 2 The shown dual-channel spout structure includes a first channel 104 and a second channel 101; the outer sleeve 105 of the first channel 104 is composed of four sections, which are sequentially from top to bottom, the first cylinder, the transition section, The second cylinder and skirt body expansion section, the cross-sectional circle diameters of each section increase from top to bottom, and the diameters of the joints of the sections are equal, and the gas 106 introduced into the channel 104 is GaCl; the second channel 101 Located at the center of the nozzle structure, the gas 103 introduced into the second channel 101 is N 2 ; Between the first channel 104 and the second channel 101 is a hollow cylinder 102 of equal diameter, whose length is slightly shorter than the length of the outer sleeve 105 . Adjusting the gas flow rate of the two channels can make the radial distribution of the reactant GaCl gas near the substrate to be grown more uniform,...

Embodiment 3

[0023] Such as image 3 The shown double-channel spout structure is based on the second embodiment, and the hollow cylinder 102 in the middle of the first channel 104 and the second channel 101 is improved. Here, the hollow cylinder 102 is composed of two sections, and its upper section is Equal-diameter hollow cylinder, the lower section of which is the skirt body. The extended section is a hollow circular platform tube, and the diameter of the junction of the two sections is equal; The expansion angles are consistent; the length of the hollow cylinder 102 is slightly shorter than the length of the outer sleeve 105 of the channel 104 . This structure further improves the uniformity of the radial distribution of the reactant GaCl gas near the upper substrate to be grown by adjusting the gas flow of the two channels, and can eliminate the problem that the growth thickness of the crystal produced by the traditional shower head system is thick in the middle and thin at the edge ...

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Abstract

The invention discloses a dual-channel nozzle structure capable of controlling reactant uniform distribution. The structure comprises a first channel and a second channel; wherein the first channel is an equal diameter cylindrical channel or a variable diameter cylindrical channel, the reactant gas in the first channel is GaCl; the second channel is arranged in the center position of the first channel, the gas in the second channel can be N2 or a mixed gas of GaCl and N2, the second channel can be a cylindrical channel, or the second channel can be composed of two sections, the upper section is in a cylindrical shape and the lower section is in an inverse circular truncated cone shape, and the diameters of the upper section and the lower section on the joint part are equal. The dual-channel structure can improve the reactant GaCl radial distribution uniformity near the substrate surface through optimizing the gas flows in the two channels, and thus the uniform growth of GaN crystal material on a large area substrate is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor material growth equipment, in particular to a dual-channel spout structure for uniform distribution of controllable reactants used in hydride vapor phase epitaxy (HVPE) growth of III-V semiconductor materials (thin film or thick film). Background technique [0002] With the increasingly prominent status of III-V film materials in the manufacture and development of various semiconductor devices, it has also attracted much attention in the new semiconductor material industry. However, Vapor Phase Epitaxy (VPE) technology is widely used in the preparation of semiconductor thin or thick films. Among them, Hydride Vapor Phase Epitaxy (HVPE) technology is often used in Group III nitride semiconductor materials due to its fast growth rate and low production cost. growth, especially gallium nitride (GaN) thick film growth. [0003] In the traditional HVPE growth system, the heated liquid metal gall...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/34
Inventor 魏武刘鹏赵红军张俊业童玉珍张国义
Owner SINO NITRIDE SEMICON
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