Method for testing low-frequency noise of amorphous silicon membrane

A technology of amorphous silicon thin film and testing method, which is applied in the direction of noise figure or signal-to-noise ratio measurement, etc., can solve problems such as inability to quickly and effectively collect and process data, slow data acquisition speed, and influence of power frequency noise, so as to reduce the background Effects of noise and power frequency noise, fast acquisition, and interference reduction

Inactive Publication Date: 2014-09-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] 1. Ignoring the impact of the temperature change of the amorphous silicon film on the noise results during the test;
[0016] 2. The current amplifier is affected by the power frequency noise introduced by the conventional voltage source;
[0017] 3. The low sampling rate of the spectrum analyzer takes a long time and the data acquisition speed is slow, so it cannot collect and process data quickly and effectively, which brings inconvenience to the test process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for testing low-frequency noise of amorphous silicon membrane
  • Method for testing low-frequency noise of amorphous silicon membrane
  • Method for testing low-frequency noise of amorphous silicon membrane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] In order to make the purpose and technical solution of the low-frequency noise testing method for an amorphous silicon thin film clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

Embodiment

[0055] Example object: 5% P-doped hydrogenated amorphous silicon film;

[0056] Example conditions: at a room temperature of 300K, a test voltage of 7V is applied to both ends of the amorphous silicon thin film sample, and the current amplifier multiple is 50nA / V;

[0057] The specific process is as follows:

[0058] Step 1: Put the amorphous silicon film to be tested into a metal box and fix it, connect the lead wires into the circuit, apply a DC voltage of 7V to the amorphous silicon film sample to stimulate the amorphous silicon film current noise signal;

[0059] Step 2: Connect the bias circuit, current amplifier and data acquisition card through the coaxial cable interface, open the Labview test software and the amplifier, adjust the amplification factor of the current amplifier, and ensure that the input current of the amplifier and the amplified output voltage are within the range of the amplifier Under the conditions within, make the amplified signal gradually incre...

Embodiment 2

[0063] In order to make the purpose and technical solution of the low-frequency noise testing method for an amorphous silicon thin film clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0064] Example object: 1% Ru (ruthenium) doped amorphous silicon film, and annealed at 700 ° C;

[0065] Example conditions: at room temperature, the sample voltage is 10V, and the amplification factor is 50nA / V;

[0066] The specific process is as follows:

[0067] Step 1: Put the amorphous silicon film to be tested into a metal box and fix it, connect the lead wires to the circuit, and apply a 10V DC voltage to the amorphous silicon film sample to stimulate the amorphous silicon film. current noise signal;

[0068] Step 2: Connect the bias circuit, current amplifier and data acquisition card through the coaxial cable interface, open the Labview test software and the amplifier, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for testing low-frequency noise of an amorphous silicon membrane, and specifically relates to a testing technology of low-frequency current noise of the amorphous silicon membrane. A testing system adopted by the testing technology comprises a biasing circuit, an electromagnetic shielding device, a noise amplifying system and a data acquisition and processing system. Firstly, the low-frequency current noise of the amorphous silicon membrane is motivated through the biasing circuit, sample low-frequency noise is amplified through a low-frequency noise current amplifier, amplified noise signals are acquired through a data acquisition card, corresponding current noise signal power spectral density is calculated, finally data are analyzed and processed through a computer, and a power spectral density curve of the low-frequency noise of the amorphous silicon membrane is obtained. The method for testing the low-frequency noise of the amorphous silicon membrane can be used for testing the low-frequency noise of the amorphous silicon membrane repeatedly and accurately, and is fast and convenient.

Description

technical field [0001] The invention relates to a low-frequency noise testing method of an amorphous silicon thin film, which relates to the technical field of uncooled infrared focal plane detectors, in particular to the low-frequency current noise testing technology of an amorphous silicon thin film. Background technique [0002] Amorphous silicon film is a kind of semiconductor thermistor film material, its resistance decreases with the increase of temperature, the temperature coefficient of resistance (TCR) is large, and the film preparation has good compatibility with silicon semiconductor technology, so it is widely used in micro A bolometer type uncooled infrared focal plane detector. The TCR, resistivity and noise level of amorphous silicon thin film are the key parameters affecting the sensitivity of focal plane devices. Among them, TCR and resistivity are easy to be accurately tested by common testing methods such as four-probe tester and step meter, so as to optim...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/26
Inventor 李伟程旭王冲王志辉顾德恩蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap