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Method for measuring state density of resistive random access memory

A technology of resistive variable memory and state density, which is applied in static memory, instruments, etc., can solve the problems that the state density of resistive variable memory cannot be realized, the composition and structure of conductive filaments are uncertain, etc.

Inactive Publication Date: 2014-09-17
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For resistive variable memory, since the resistance switching phenomenon shown by its current-voltage characteristics is mainly attributed to conductive filaments, the structure and material properties of the device itself have an important impact on the formation of conductive filaments. In addition, the composition of conductive filaments Therefore, it is impossible to obtain the state density of resistive variable memory through first-principle calculations, and how to obtain the state density of resistive variable memory is a major technical problem at present.

Method used

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  • Method for measuring state density of resistive random access memory
  • Method for measuring state density of resistive random access memory
  • Method for measuring state density of resistive random access memory

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Embodiment 1

[0095] This embodiment is based on Cu / WO 3 / Pt RRAM device is implemented as an example, and the Cu / WO 3 The current value of / Pt RRAM device changes with time, the result is as follows figure 2 shown in ; then theoretically calculate Cu / WO 3 / Pt RRAM device current value changing with time, and then obtain the simulation curve consistent with the experimental results, when calculating, select the following parameters according to relevant literature reports: N t =1×10 28 m -3 , α -1= 2.7nm, v 0 =1×10 12 the s -1 , and then repeatedly select different state density widths σ and substitute into formula (1) to formula (10) to calculate Cu / WO 3 The current value of the / Pt resistive memory device changing with time, in this embodiment, when σ=3.2K B When T, the theoretical calculation results are consistent with the experimental test results, the results are as follows figure 2 shown in . Finally put σ=3.2K B Substitute T into formula (2) to get Cu / WO 3 / Pt RRAM de...

Embodiment 2

[0097] This embodiment is based on SnO 2 : F / Fe 2 o 3 / Au RRAM device is implemented as an example, and the SnO 2 : F / Fe 2 o 3 The current value of / Au resistive memory device changes with time, the results are as follows Figure 4 shown in ; then the theoretical calculation of SnO 2 : F / Fe 2 o 3 The current value of the / Au resistive memory device changes with time, and the simulation curve consistent with the experimental results is obtained. When calculating, according to the relevant literature reports, the following parameters are selected: N t =1×10 24 m -3 , α -1 = 2.7nm, v 0 =1×10 12 the s -1 , and then repeatedly select different state density widths σ and substitute into formula (1) to formula (10) to calculate SnO 2 : F / Fe 2 o 3 The current value of the / Au resistive memory device changing with time, in this embodiment, σ=2K B When T, the theoretical calculation results are consistent with the experimental test results, the results are as follows ...

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Abstract

The invention discloses a method for measuring the state density of a resistive random access memory. The method comprises the steps of testing a relaxation effect for measuring current of the resistive random access memory so as to obtain a current value measured by the experiment on the resistive random access memory, wherein the width of the state density of the resistive random access memory is selected according to the current value measured by the experiment; calculating the state density of the resistive random access memory according to the selected state density width of the resistive random access memory. According to the method disclosed by the invention, a measurement process is simple, and the state densities of the resistive random access memories which are prepared from various materials and have different structures can be obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a method for measuring the state density of a resistive variable memory. Background technique [0002] Memory is an important class of semiconductor devices. With the continuous advancement of electronic technology, especially the continuous development of portable electronic devices, non-volatile memory accounts for an increasing share of the entire memory market, of which more than 90% Occupied by flash memory (Flash). However, as the size of the device continues to shrink, the development of Flash is limited. On the one hand, its programming voltage cannot be reduced proportionally. On the other hand, as the size of the device decreases and the tunnel oxide layer becomes thinner, the charge retention performance decreases. This makes the non-volatile resistive random access memory (Resistive Random Access Memory, RRAM), which stores data based on resistance chang...

Claims

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Application Information

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IPC IPC(8): G11C29/08
Inventor 卢年端李泠刘明闫小兵吕杭炳孙鹏霄
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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