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An anti-cracking puf structure

An anti-cracking and capacitive technology, which is applied to key distribution, can solve problems such as the inability to realize the anti-cracking function, achieve good uniqueness and stability, and prevent external attacks

Active Publication Date: 2017-04-19
戴葵
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the existing voltage divider, SRAM and delay PUFs cannot achieve complete anti-cracking functions. Therefore, it is urgent to design an anti-cracking PUF structure to ensure that the corresponding PUF output has good uniqueness and stability. At the same time, it also has complete anti-cracking features

Method used

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  • An anti-cracking puf structure
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Embodiment Construction

[0021] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0022] figure 2 Shown is an example diagram of the new anti-cracking PUF structure of the present invention, which consists of a plurality of PUF capacitive basic units to form a capacitive array, and each PUF capacitive basic unit includes a control circuit, a switched capacitor circuit, a comparator, and top-layer metal wiring and the sub-top metal trace; the control circuit is respectively connected with the switched capacitor circuit and the comparator, and the signal output of the switched capacitor circuit is amplified by the comparator and then output; the switched capacitor circuit is respectively connected with the top metal trace and the sub-top metal trace. The top metal and the sub-top metal use the upper plate of the capacitor and the lower plate of the capacitor as sensitive signal lines respectively, and are mixed with...

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Abstract

The invention discloses a novel anti-cracking physical unclonable function (PUF) structure. Firstly, PUF basic units are capacitive circuits, switch capacitive circuits are adopted to capture the process deviation of capacitors, and the process deviation is converted into the voltage deviation so as to realize the physical unclonable function; then, a capacity-sensitive input-output coupling positive feedback comparator is adopted to amplify the voltage deviation values generated by the switch capacitive circuits, and the voltage deviation values are converted into a PUF0 / 1 secret key; after that, the PUF capacitive basic units are adopted to form a capacitive array to protect a whole chip; upper polar plates of sampled capacitors in each PUF capacitive basic unit are wired through top metal and are wound with a ground wire in a mixed mode, and lower polar plates of the sampled capacitors in each PUF capacitive basic unit are wired through secondary top metal and are wound with the ground wire in a mixed mode. All wiring covers the PUF circuits, core circuits and other circuits in need of protection. The anti-cracking PUF structure has a good physical unclonable property, and meanwhile can effectively prevent the external attacks such as probes and destruction-reconstruction.

Description

technical field [0001] The invention mainly relates to the design field of PUF-based identity authentication, key generation and anti-counterfeiting technology, and in particular refers to an anti-cracking PUF structure. Background technique [0002] The Physical Unclonable Function (PUF for short) was first proposed by Pappu in "Physical One-Way Functions" in March 2001, and soon appeared a variety of methods based on the principles of optics, electromagnetism and electronics. The PUF structure is widely used in the fields of identity authentication, security key generation and anti-counterfeiting technology. With the rapid development of integrated circuit technology, integrated circuit chips using PUF technology also appear soon, and are widely used in the fields of chip security and anti-counterfeiting. The PUF circuit mainly generates an infinite number of unique and unclonable outputs by capturing the inevitable process deviation of the chip during the manufacturing p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04L9/32H04L9/08
CPCH04L9/3278G09C1/00H04L2209/12
Inventor 万美琳贺章擎韩爽李聪戴葵邹雪城
Owner 戴葵
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