Testing method for table board leakage current in gate leakage current of HEMT device
A leakage current and gate leakage technology, applied in the field of microelectronics, to achieve the effects of stable process technology, fast test method and accurate separation results
Active Publication Date: 2014-09-24
云南凝慧电子科技有限公司
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[0006] The object of the present invention is to propose a method for testing the mesa leakage current in the gate leakage current of a HEMT device, to solve the quantitative separation problem of the mesa leakage current in the Schottky gate leakage current, for the material growth and device process optimization of the HEMT device, and Provide guidance on defect characterization and reliability assessment
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[0029] The specific implementation of the present invention will be further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.
[0030] 1. Test principle
[0031] HEMT devices usually use a mesa etching process to achieve isolation between devices. The flow of carriers between devices is blocked by etching trenches with a depth much larger than the two-dimensional electron gas channel in the active area between devices, so as to achieve electrical insulation between devices, and the process is simple and easy Row. In the design of HEMT devices, in order to ensure the complete control of the two-dimensional electron gas under the barrier layer by the metal gate electrode, it is usually necessary to allow both ends of the gate metal electrode to cover the mesa formed by etching. When a certain bias is applied...
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The invention discloses a testing method for table board leakage current in gate leakage current of an HEMT device. The testing method mainly solves the problem that the table board leakage current in the gate leakage current of the HEMT device can not be separated in the prior art. According to the realizing scheme, a testing auxiliary device with the same structure as the tested HEMT device is manufactured, and the width of a gate electrode and the width of a source drain electrode of the testing auxiliary device are alpha times that of the tested HEMT device, wherein alpha is larger than 0 and is not equal to 1; a semi-conductor parameter testing device is used for testing the gate leakage current of the tested HEMT device and the testing auxiliary device of the HEMT device; the gate leakage current of the testing auxiliary device of the HEMT device is subtracted from the gate leakage current of the tested HEMT device multiplied by the alpha times, and the result is divided by (alpha-1) terms to obtain the table board leakage current of the HEMT device. The testing method is fast and easy to use, the result is accurate and reliable, and the basis can be provided for analyzing the generation mechanism of the table board leakage current in the gate leakage current in the follow-up stage and improving the reliability of the HEMT device.
Description
technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a test method for the mesa leakage current in the gate leakage current of a high electron mobility heterojunction transistor HEMT device, which is used for improving the reliability of the HEMT device. Background technique [0002] In recent years, the third-generation wide-bandgap semiconductor represented by GaN has attracted widespread attention due to its characteristics such as large bandgap, high breakdown electric field, and high thermal conductivity. In particular, the high electron mobility heterojunction transistor HEMT formed by materials such as GaN and AlGaN has a high-concentration and high-mobility two-dimensional electron gas at the heterojunction interface. And high-power electronic devices and microwave devices have great advantages and application prospects. Therefore, in recent years, GaN-based HEMT devices have been a research hotspot of...
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IPC IPC(8): G01R19/00
Inventor 郑雪峰范爽孙伟伟张建坤康迪王冲杜鸣曹艳荣马晓华郝跃
Owner 云南凝慧电子科技有限公司