Vertical type LED manufacturing method

A production method and vertical technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of increasing process costs, reducing costs, mass production, disadvantages, etc., to achieve uniform current distribution, increase luminous intensity, and increase current expansion. Effect

Active Publication Date: 2014-09-24
ENRAYTEK OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, this process requires additional deposition of SiO 2 , and is also required for deposited SiO 2 Etching, this

Method used

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Embodiment Construction

[0028] The manufacturing method of the vertical LED of the present invention will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, it should be understood that those skilled in the art can modify the present invention described here, and still realize the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0029] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing fr...

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Abstract

The invention provides a vertical type LED manufacturing method. An existing undoped layer is etched as a current blocking layer, an insulated dielectric layer does not need to be additionally formed, the process steps are decreased, and production cost is lowered; meanwhile, the formed current blocking layer can improve the current expanding of a vertical type LED under the large current, current distribution is even, and therefore the luminous intensity of the vertical type LED is improved.

Description

technical field [0001] The invention relates to the field of LED manufacture, in particular to a method for manufacturing a vertical LED. Background technique [0002] In recent years, research on high-power light-emitting diodes (Light-Emitting Diode, LED) has become a trend. However, LED chips with the same side structure have disadvantages such as current crowding, high voltage, and difficulty in heat dissipation, making it difficult to meet high-power requirements. The vertical LED chip can not only effectively solve the crowding effect under high current injection, but also alleviate the reduction of internal quantum efficiency caused by high current injection, and improve the photoelectric performance of the vertical LED chip. [0003] At present, the preparation process of vertical LED chips is mainly to grow GaN on the substrate (usually sapphire material), make a contact layer and a metal reflector layer on the GaN-based epitaxial layer, and then use electroplating ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/14
CPCH01L33/0066H01L33/0075H01L33/14
Inventor 张宇童玲张琼吕孟岩张楠
Owner ENRAYTEK OPTOELECTRONICS
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