Substrate processing method and substrate processing apparatus

Abstract

The present disclosure provides a technology capable of suppressing the destruction of wall portions which form resist patterns and suppress a change in the line width of the resist patterns when cleaning a developed substrate. There is provided a substrate processing method including: supplying a developing liquid to a surface of an exposed substrate to form a resist pattern; supplying a cleaning liquid to the surface of the substrate to remove a residue generated in the developing step from the substrate; supplying a replacing liquid to the surface of the substrate to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN / m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force.

Description

technical field [0001] The present invention relates to a substrate processing method for processing a substrate on which a resist pattern has been developed, a substrate processing apparatus, and a storage medium storing a computer program for implementing the method. Background technique [0002] In the photolithography process performed on a semiconductor wafer (hereinafter referred to as "wafer"), a resist film is formed on the surface of the wafer, and after the above resist film is exposed along a predetermined pattern, it is developed. The resist film forms a resist pattern. Then, in order to remove the residue of the resist generated by the above-mentioned development, a cleaning solution is supplied to the wafer to perform cleaning treatment. After the cleaning liquid is supplied, the cleaning liquid on the surface of the wafer is shaken off by rotation of the wafer, and the wafer is dried. [0003] For example, pure water can be used as the cleaning solution, but...

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Problems solved by technology

In addition, Patent Document 2 describes a technique of supplying gas to the center of a rotating substrate, forming holes in the liquid layer of the cleaning liquid on the surface of the substrate, expanding the holes, and drying the substrate, but the above-mentioned problems cannot be solved.

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