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Substrate processing method and substrate processing apparatus

A substrate processing method and substrate technology are applied in the directions of cleaning methods and utensils, chemical instruments and methods, cleaning methods using liquids, etc., to achieve the effects of suppressing collapse and suppressing changes in the line width of patterns

Active Publication Date: 2018-02-13
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, Patent Document 2 describes a technique of supplying gas to the center of a rotating substrate, forming holes in the liquid layer of the cleaning liquid on the surface of the substrate, expanding the holes, and drying the substrate, but the above-mentioned problems cannot be solved.

Method used

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  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus

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Embodiment Construction

[0077] refer to figure 1 longitudinal section side view of and figure 2 The plan view of FIG. 1 illustrates the developing device 1 constituting the substrate processing apparatus of the present invention. In the developing device 1 , the wafer W is transported by a substrate transport mechanism not shown. A resist film is formed on the surface of the wafer W, and the resist film is exposed in a predetermined pattern.

[0078] In the figure, 11 is a spin chuck, which is a substrate holding part for suctioning and attaching the central part of the back side of the wafer W to maintain a horizontal posture. The spin chuck 11 is connected to the rotation mechanism 13 via the rotation shaft 12, and the wafer W can be freely rotated while holding the wafer W. A cup body 21 with an upper side opening is provided such that the cup body 21 surrounds the wafer W on the spin chuck 11 . The cup body 21 includes, for example, an outer cup 22 whose upper side is quadrangular and whose ...

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Abstract

There is provided a substrate processing method including: supplying a developing liquid to a surface of an exposed substrate to form a resist pattern; supplying a cleaning liquid to the surface of the substrate to remove a residue generated in the developing step from the substrate; supplying a replacing liquid to the surface of the substrate to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN / m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force.

Description

technical field [0001] The present invention relates to a substrate processing method for processing a substrate on which a resist pattern has been developed, a substrate processing apparatus, and a storage medium storing a computer program for implementing the method. Background technique [0002] In the photolithography process performed on a semiconductor wafer (hereinafter referred to as "wafer"), a resist film is formed on the surface of the wafer, and after the above resist film is exposed along a predetermined pattern, it is developed. The resist film forms a resist pattern. Then, in order to remove the residue of the resist generated by the above-mentioned development, a cleaning solution is supplied to the wafer to perform cleaning treatment. After the cleaning liquid is supplied, the cleaning liquid on the surface of the wafer is shaken off by rotation of the wafer, and the wafer is dried. [0003] For example, pure water can be used as the cleaning solution, but...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67
CPCH01L21/67023H01L21/67034H01L21/6704G03F7/3021H01L21/67028H01L21/67051B08B3/024B08B5/00
Inventor 田中启一吉原孝介井关智弘
Owner TOKYO ELECTRON LTD
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