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Semiconductor structure and manufacturing method thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as poor adhesion, improve adhesion, increase yield, and improve reliability Effect

Active Publication Date: 2017-05-03
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a semiconductor structure and its preparation method, which is used to solve the problem of poor adhesion between the low-k dielectric material layer and metal copper in the prior art

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0048] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0049] see Figure 1a to Figure 1k with figure 2 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component ...

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Abstract

The invention provides a semiconductor structure and a manufacturing method thereof. The method includes the following steps that: a metal aluminum layer is deposited on the surface of a conductive interconnection structure; oxygen plasma treatment is performed on the surface of the metal aluminum layer, so that an aluminum oxide layer can be formed on the surface of the metal aluminum layer; and finally, a low-k dielectric electric layer NDC is formed on the surface of the aluminum oxide layer. Adhesion between conductive metal is excellent, and adhesion between the NDC layer and the aluminum oxide layer is also excellent, and therefore, adhesion between the conductive interconnection structure and the NDC layer can be improved wholly, and the yield and reliability of the semiconductor device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure capable of improving the adhesion between a metal interconnection structure and a metal adhesion layer and a manufacturing method thereof. Background technique [0002] With the development of miniaturization of integrated circuits, the semiconductor device CMOS has a deep submicron structure, and semiconductor integrated circuits contain a large number of semiconductor components. In this large-scale integrated circuit, high-performance and high-density connections between components are not only interconnected in a single interconnection layer, but also interconnected between multiple layers. Therefore, a multilayer interconnection structure is generally provided, wherein a plurality of interconnection layers are stacked on each other, and an insulating dielectric layer is provided between the plurality of interconnection layers. T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/538
Inventor 周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP