pixel structure

Abstract

The invention relates to a pixel structure which comprises multiple parallel scanning lines, and multiple parallel data lines intersecting with the multiple scanning lines to limit multiple sub-pixels. Each sub-pixel comprises a pixel electrode and a thin film transistor, wherein the pixel electrode comprises multiple slits which include a first slit group and a second slit group, the first slit group and the second slit group are distributed symmetrically, the thin film transistor comprises two grid electrodes, a source electrode, a drain electrode and a polysilicon layer, the polysilicon layer is L-shaped and comprises a conductive impurity heavy doping source electrode region, a first conductive impurity doping region, a first grid electrode channel, a second conductive impurity doping region, a second grid electrode channel region, a third conductive impurity doping region and a conductive impurity doping drain electrode region, the first grid electrode channel and the second grid electrode channel are arranged on the same side of the scanning lines in parallel, and the second grid electrode channel and the third conductive impurity doping region are arranged between the first slit group and the second slit group correspondingly.

Description

technical field [0001] The invention relates to a liquid crystal display technology, in particular to a pixel structure of a low-temperature polysilicon type liquid crystal display. Background technique [0002] As far as TFT-LCD is concerned, traditional amorphous silicon has been used as the main material of TFT for a long time, and now there is another option, that is, polysilicon replaces amorphous silicon and may become the mainstream. This mainly focuses on whether it is the mobility of electrons or holes, polysilicon provides better mobility than amorphous silicon. In addition, another advantage of polysilicon TFT is that the driving circuit of the LCD panel (including NMOS transistors or PMOS transistors or even complementary metal-oxide-semiconductor transistors (CMOS)) can be formed at the same time as the manufacture of the pixel panel. Due to the above factors, LCDs using polysilicon type TFTs can offer better switching rates and are more attractive. [0003] P...

AI Technical Summary

Problems solved by technology

[0004] For MVA liquid crystal displays using polysilicon TFTs, the double gates of polysilicon TFTs will occupy more space and reduce the aperture ratio of the liquid crystal display

In addition, the configuration of the polysilicon layer may affect the lines of force between the slits, causing the alignment of the liquid crystal near the polysilicon layer to be disordered, resulting in dark lines on the screen

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