Storage unit

Abstract

The invention discloses a storage unit which includes a control gate (21), a storage unit, a control gate layer (23) (21) and a storage unit (23) between the insulating dielectric layer (22), a tunnel insulating layer (24), channel (25), among them, the tunnel insulating layer (24) the channel (25) above is non planar. The present invention insulating layer is non planar design through between the memory cell layer and the channel tunnel, can increase the width of the channel stereo, thereby increasing the channel current of storage unit channel opened, improve the storage information stored and read speed, so as to provide conditions for further reducing process node.

Description

technical field [0001] The invention relates to the field of storage, in particular to a storage unit. Background technique [0002] In the prior art, the tunnel insulating layer between the memory cell layer and the channel is planar, as shown below. figure 1 is a schematic structural diagram of the Y direction of the storage unit in the prior art; figure 2 It is a structural schematic diagram of the X direction of continuous memory cells in the prior art; image 3 It is a schematic diagram of the X-direction structure of the disconnected memory cell in the prior art. From Figure 1 to Figure 3 It can be seen that the memory cell in the prior art includes a control gate 11, a memory cell layer 13, an insulating dielectric layer 12 between the control gate 11 and the memory cell 13, a tunnel insulating layer 14, a channel 15 and two adjacent channels The insulating layer 16 between which the memory cell layer 13, the insulating dielectric layer 12, and the tunnel insula...

AI Technical Summary

Problems solved by technology

[0003] With the continuous shrinking of process nodes, regardless of the electron tunneling oxide layer (ETOX) or SONOS structure, NOR flash memory (Flash) or NAND flash memory (Flash), the channel width of the memory cell has been reduced again and again, so that the planar shape of the tunnel can continue to be used. The insulating layer, the channel width of the storage unit is narrow, and the current after the channel is opened is limited, which affects the reading and storage speed of the stored information, and the shrinkage of the storage node is also limited, which affects the improvement of the storage density. Helps reduce storage costs

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