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Low-temperature sintered V series ZnO voltage-sensitive ceramic material and preparation method thereof

A varistor ceramic and low-temperature sintering technology, which is applied in the field of low-temperature sintered V-series ZnO varistor ceramic materials and its preparation, can solve the problems of high production cost, lower sintering temperature and potential gradient, and high potential gradient, and achieve low-voltage sensitive voltage, Reduced energy consumption and fewer types

Inactive Publication Date: 2014-11-05
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The Chinese invention patent with application number 201310021167.1 also provides a low-temperature sintered ZnO-Bi 2 o 3 It is a varistor material, the sintering temperature is as low as 830-870°C, but the potential gradient is as high as 1450V / mm
The Chinese invention patent with the application number 201110278893.2 discloses a low-voltage varistor ceramic material and its preparation method. In ZnO-Bi 2 o 3 On the basis of adding a small amount of V at the same time 2 o 5 、TiO 2 As a modifying additive, the sintering temperature and potential gradient are significantly reduced, but the V 2 o 5 and TiO 2 They are all nano-powders, and the preparation process requires secondary ball milling, and the final ball-milled powder is pre-calcined at 650-700°C, resulting in high production costs

Method used

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  • Low-temperature sintered V series ZnO voltage-sensitive ceramic material and preparation method thereof
  • Low-temperature sintered V series ZnO voltage-sensitive ceramic material and preparation method thereof
  • Low-temperature sintered V series ZnO voltage-sensitive ceramic material and preparation method thereof

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Embodiment 1

[0040] The low-temperature sintered V-based ZnO varistor ceramic material described in this embodiment is ZnO-V 2 o 5 As the matrix, the oxides of Mn, Nb, Gd, and Er are used as modifying additives.

[0041] The components and mole percentages of the V series ZnO varistor ceramic materials described in this embodiment are divided into: ZnO (97.5-x)mol%, V 2 o 5 1.2mol%, Mn 3 o 4 0.5mol%, Nb 2 o 5 0.5mol%, Gd 2 o 3 0.3mol%, Er 2 o 3 xmol% (x=0.1,0.2,0.3).

[0042] The preparation method of the low-temperature sintered V-system ZnO varistor ceramic material described in this embodiment specifically includes the following steps:

[0043] (1) Mix the powders of each component and carry out ball milling. The ball milling speed is 250r / min, and the ball milling time is 10h. Agate balls and absolute ethanol are selected as the ball milling medium, and the mass ratio of raw materials: agate balls: anhydrous ethanol is 1:10:3;

[0044] (2) Dry the ball-milled slurry at...

Embodiment 2

[0063] The low-temperature sintered V-based ZnO varistor ceramic material described in this embodiment is ZnO-V 2 o 5 As the matrix, the oxides of Mn, Nb, Gd, and Er are used as modifying additives.

[0064] The components and mole percentages of the V series ZnO varistor ceramic materials described in this example are divided into: ZnO 98.6mol%, V 2 o 5 0.5mol%, Mn 3 o 4 0.6mol%, Nb 2 o 5 0.1mol%, Gd 2 o 3 0.15mol%, Er 2 o 3 0.05mol%.

[0065] The preparation method of the low-temperature sintered V-system ZnO varistor ceramic material described in this embodiment specifically includes the following steps:

[0066] (1) Mix the powders of each component and carry out ball milling. The ball milling speed is 280r / min, and the ball milling time is 10h. Agate balls and absolute ethanol are used as the ball milling media. The mass ratio of raw materials: agate balls: absolute ethanol is 1:12:3.5;

[0067] (2) Dry the ball-milled slurry at 100°C for 20 hours to ...

Embodiment 3

[0087] The low-temperature sintered V-based ZnO varistor ceramic material described in this embodiment is ZnO-V 2 o 5 As the matrix, the oxides of Mn, Nb, Gd, and Er are used as modifying additives.

[0088] The components and mole percentages of the V series ZnO varistor ceramic materials described in this example are divided into: ZnO 97.8mol%, V 2 o 5 0.8mol%, Mn 3 o 4 1.0mol%, Nb 2 o 5 0.25mol%, Gd 2 o 3 0.125mol%, Er 2 o 3 0.025mol%.

[0089] The preparation method of the low-temperature sintered V-system ZnO varistor ceramic material described in this embodiment specifically includes the following steps:

[0090] (1) Mix the powders of each component and carry out ball milling. The ball milling speed is 260r / min, and the ball milling time is 10h. Agate balls and absolute ethanol are used as ball milling media. The mass ratio of raw materials: agate balls: anhydrous ethanol is 1:12.5:4;

[0091] (2) Dry the ball-milled slurry at 115°C for 16 hours to ob...

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Abstract

The invention discloses a low-temperature sintered V series ZnO voltage-sensitive ceramic material and a preparation method thereof, and belongs to the technical field of functional ceramic preparation and application. The low-temperature sintered V series ZnO voltage-sensitive ceramic material uses ZnO-V2O5 as a matrix, and oxides of Mn, Nb, Gd and Er as modified additives. The preparation method includes mixing, ball milling, drying, granulation, sieving, molding for forming, sintering and silver electrode preparation. The V1mA of ZnO pressure-sensitive ceramic material obtained by the invention has varistor voltage from 200 to 400 V / mm, nonlinear coefficient alpha greater than 20, and leakage current IL of 0.10- 0.35 mA; and the sintering temperature is 800 to 950 DEG C. compared to the Bi series and Pr series ZnO voltage-sensitive ceramic materials, the V series ZnO voltage-sensitive material provided by the invention has greatly reduced sintering temperature, good comprehensive performance, and simple preparation process, safety and reliability, and is expected to realize low temperature co-firing of MLV ceramic layer voltage-sensitive material with a silver electrode.

Description

technical field [0001] The invention relates to a low-temperature sintered V-series ZnO pressure-sensitive ceramic material and a preparation method thereof, belonging to the technical field of preparation and application of functional ceramics. Background technique [0002] Pressure-sensitive ceramic materials mainly include SiC, ZnO, BaTiO 3 , Fe 2 o 3 , SnO 2 , SrTiO 3 Wait. ZnO varistor was originally developed by Panasonic Corporation of Japan in 1968. Due to its excellent nonlinear characteristics, it is currently the most widely used and best-performing varistor ceramic. ZnO varistor ceramics is a non-linear semiconducting ceramic that uses a special grain boundary structure to form back-to-back double Schottky barriers, and the formation of the grain boundary structure depends on the dopant and sintering process. ZnO varistor ceramics use ZnO as the main raw material, adding a small amount of MnO 2 、 Bi 2 o 3 、Pr 6 o 11 、Co 2 o 3 、Cr 2 o 3 、TiO 2 And ...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622C04B35/63
Inventor 甘国友王志敏严继康杜景红易健宏
Owner KUNMING UNIV OF SCI & TECH
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