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Polysilicon semi-fusion casting device adopting bottom air cooling and technology using the same

A polysilicon and air-cooling technology, which is applied in the growth of polycrystalline materials, crystal growth, chemical instruments and methods, etc., can solve the problems of prolonging the production cycle, prolonging the melting time, and increasing labor costs, so as to save time and cost and reduce production costs , The effect of saving the cost of heating field

Inactive Publication Date: 2014-11-05
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the existing semi-melting process is realized by partially opening the heat insulation cage to dissipate heat, which not only requires better heat preservation performance of the ingot casting furnace, but also prolongs the melting time, resulting in a longer production cycle
The high requirements on the insulation performance of the ingot furnace increase the cost of the ingot furnace, and the temperature control process also increases the labor cost

Method used

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  • Polysilicon semi-fusion casting device adopting bottom air cooling and technology using the same

Examples

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Effect test

Embodiment 1

[0028] A process for preparing polycrystalline silicon ingots, comprising the following process steps:

[0029] ① Preheating: Put the crucible 6 filled with silicon material into the ingot casting device, evacuate to 0.8Pa, keep the vacuum and make the temperature in the crucible 6 reach 1175°C within 3 hours;

[0030] ② Melting: Open the top pipe 1 to feed argon gas, the flow rate of argon gas is 20L / min, the pressure in the furnace is kept at 40kPa, and it reaches 1550°C within 2 hours, and then keeps warm at 1550°C until only the silicon material with a height of 3cm at the bottom is left Not melted; during this process, the bottom pipe 9 and the top pipe 1 are fed with argon gas at the same time, the argon flow rate of the top pipe 1 is 20L / min, and the argon flow rate of the bottom pipe 9 is adjusted between 10L / min~50L / min, Ensure that the temperature at the bottom of the crucible is always at 1380°C;

[0031] ③Crystal growth: The temperature is lowered from 1550°C to 1...

Embodiment 2

[0035] A process for preparing polycrystalline silicon ingots, comprising the following process steps:

[0036] ① Preheating: Put the crucible 6 filled with silicon material into the ingot casting device, evacuate to 1 Pa, keep the vacuum and make the temperature in the crucible 6 reach 1175°C within 5 hours;

[0037] ② Melting: Open the top pipe 1 to feed argon gas, the flow rate of argon gas is 30L / min, the pressure in the furnace is kept at 60kPa, and it reaches 1560°C within 3 hours, and then keeps warm at 1560°C until only the silicon material with a height of 1cm at the bottom is left Not melted; during this process, the bottom pipe 9 and the top pipe 1 are fed with argon gas at the same time, the argon flow rate of the top pipe 1 is 30L / min, and the argon flow rate of the bottom pipe 9 is adjusted between 10L / min~50L / min, Ensure that the temperature at the bottom of the crucible is always at 1390°C;

[0038] ③Crystal growth: the temperature is lowered from 1560°C to 14...

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Abstract

The invention relates to a polysilicon semi-fusion casting device adopting bottom air cooling and a technology using the same, and belongs to the field of polysilicon preparation. The polysilicon semi-fusion casting device adopting bottom air cooling comprises a furnace body, a directional solidification block in the furnace body and a crucible on the directional solidification block, a ventilation bottom pipe (9) is arranged in the center below the directional solidification block, and the opening of the bottom pipe is 2-5cm away from the directional solidification block. The polysilicon semi-fusion casting device reduces a furnace body heat field cost, a labor cost and energy consumption in a fusion phase, reduces a production cost by 5%, reduces semi-fusion technology melting, crystallization and cooling time by about 4h and saves a time cost by 5%.

Description

technical field [0001] The invention relates to a bottom air-cooled polycrystalline silicon semi-melted ingot casting device and a process, belonging to the field of polycrystalline silicon preparation. Background technique [0002] At present, in the ingot production process, compared with the full melting process, the semi-melting process is realized by reserving some unmelted seed crystals or broken single crystals during the melting process, which can more easily obtain ingots with high photoelectric conversion efficiency , this process has strict requirements on the temperature control of the bottom of the crucible. However, the existing semi-melting process is realized by partially opening the heat insulation cage to dissipate heat, which not only requires better heat preservation performance of the ingot casting furnace, but also prolongs the melting time, resulting in a longer production cycle. The high requirements on the thermal insulation performance of the ingot...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B28/06
Inventor 姜大川李佳艳谭毅李鹏廷任世强
Owner DALIAN UNIV OF TECH
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