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A kind of graphene film field emission cathode

A technology of graphene film and field emission cathode, which is applied in the direction of electrical components, discharge tube/lamp parts, circuits, etc., to achieve good conductivity

Active Publication Date: 2016-11-02
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be used in various field emission devices such as field emission X-ray tubes, field emission microwave tubes, field emission flat panel displays, etc.

Method used

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  • A kind of graphene film field emission cathode
  • A kind of graphene film field emission cathode
  • A kind of graphene film field emission cathode

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preparation example Construction

[0027] The preparation method of the continuous graphene film 70 is vapor phase chemical deposition method, plasma enhanced vapor phase chemical deposition method, mechanical exfoliation method or redox method.

[0028] The continuous graphene film 70 is single-layer graphene, two-layer graphene or multi-layer graphene.

[0029] The preparation method of the porous array 30 is electron beam lithography, ultraviolet ray lithography, microsphere template method or anodized aluminum template method.

[0030] The cathode substrate 40 is an insulating material.

[0031] The material of the cathode substrate 40 is one or a combination of at least two of silicon dioxide, aluminum oxide or silicon nitride.

specific Embodiment

[0032] The concrete preparation process of a kind of graphene film field emission cathode of the present invention is as follows:

[0033] Step 1: Preparation of continuous graphene film 70:

[0034] Place the copper foil in a quartz tube, and heat it from room temperature to 800-1000°C under an argon atmosphere. The flow rate of argon was maintained at 600 sccm, and the temperature increase rate was 8° C. / min. After the copper foil is heated to the target temperature, hydrogen gas is introduced for reduction annealing. The hydrogen gas flow rate is 60 sccm, and the flow rate and temperature of argon gas remain constant. After 20 minutes, 10-50 sccm methane gas, 100 sccm hydrogen gas and 1000 sccm argon gas are injected. After growing for 5-15 minutes, turn off the methane and hydrogen, cool down to room temperature in an argon atmosphere, and grow a continuous graphene film 70 on the copper foil.

[0035] Step 2: Transfer of Graphene

[0036] Coat PMMA on the copper foil t...

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Abstract

The invention relates to a graphene film field emission cathode. The graphene film field emission cathode comprises a cathode base and a graphene film covered on the cathode base; a porous array is arranged on the graphene film. The invention can fully increase the edge ratio of the graphene film by preparing a porous film structure, and then improve its large current emission capability; at the edge of the graphene hole, a triple junction of "metal-insulator-vacuum" will be formed, which will greatly enhance Field emission current, reduce field emission driving voltage.

Description

technical field [0001] The invention relates to the field of vacuum electronics, in particular to a graphene film field electron emission cathode, which is suitable for cold cathodes in various vacuum electronic devices. Background technique [0002] Graphene is a quasi-two-dimensional carbonaceous nanomaterial formed by stacking a single layer of carbon atoms. Due to its unique material properties, graphene has become a research hotspot among scholars from all over the world. As Kostya Novoselov and Ander Geim won the Nobel Prize in Physics for their research on graphene in 2010, the research on graphene material properties, preparation technology and device application set off a new climax. Because graphene has very good electrical, mechanical and chemical properties, it has been widely used in the research of various electronic devices. Graphene can have the thickness of a single atomic layer, so its aspect ratio is very high (ratio of thickness to area), and thus has ex...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J1/304
Inventor 李驰白冰李振军和峰杨晓霞裘晓辉戴庆
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA