Semiconductor device
A semiconductor and conductive technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as electrostatic discharge fragility
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no. 1 Embodiment approach
[0061] Next, while referring to the attached Figure 1 Next, the semiconductor device of the present invention will be described. According to the semiconductor device of the present invention such as Figure 1~3 A plan explanatory view, a cross-sectional explanatory view, and an equivalent circuit diagram respectively showing the semiconductor structure have a first conductivity type semiconductor substrate ( Figure 1~3 In the example shown, it is a P-type semiconductor substrate) 1, and a second conductivity-type semiconductor layer formed on the surface of the semiconductor substrate 1 (in Figure 1~3 In the example shown, the first region 2 of the N-type epitaxial semiconductor layer) has a circuit element including a PN junction formed by the semiconductor substrate 1 and the first region 2 ( Figure 1~3 The example shown is a PNP transistor) 10 and an input terminal 13 connected to the first region 2, and a protection element ( Figure 1~3 In the example shown it is ...
no. 2 Embodiment approach
[0075] A plan explanatory view, a cross-sectional explanatory view, and an equivalent circuit diagram of the semiconductor structure of the semiconductor device according to the second embodiment of the present invention are as follows: Figure 5-7 shown. This embodiment differs from the first embodiment in that the circuit elements are lateral PNP transistors. Such as Figure 5 as well as Figure 6 As shown, the only structural difference from Embodiment 1 is that the collector 4 of the PNP transistor 10 is not in the P-type semiconductor substrate 1 in the first embodiment, but in the first region 2 formed of the above-mentioned N-type semiconductor. In this point, there is a P-type semiconductor region formed around the emitter 3 of the transistor. exist Figure 7 In the equivalent circuit of , only the point that the collector 4 of the PNP transistor 10 is not directly connected to the base of the protection element 11 (semiconductor substrate 1 ) is different. The st...
no. 3 Embodiment approach
[0079] A plan explanatory view, a cross-sectional explanatory view, and an equivalent circuit diagram of a semiconductor structure of a semiconductor device according to a third embodiment of the present invention are as follows: Figure 8-10 shown. This embodiment differs from the second embodiment in that the circuit element is an NPN transistor 19 and the input terminal 13 is connected to the collector. The NPN transistor 19 as Figure 8 as well as Figure 9 As shown, the first region 2 connected to the input terminal 13 via the contact region 18 is used as the collector, the P-type region 16 formed in the first region 2 is used as the base, and the N-type region 16 formed in the P-type region 16 is used as the collector. Type region 17 is formed for the emitter. Such as Figure 9 as well as Figure 10 As shown, in the equivalent circuit, the input terminal 13 and the collector of the protective element 11 are also different in that the collector of the NPN transistor ...
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