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An infrared light-emitting diode with multiple roughened layers

A technology of infrared light emitting and roughening layer, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as unsatisfactory roughening effect, and achieve the effect of improving external quantum efficiency, increasing light-emitting area, and increasing surface light-emitting area

Active Publication Date: 2017-05-24
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the defect of the roughened interface is that the roughened interface is based on a single-layer, simple roughened epitaxial layer, and the surface of the epitaxial layer has a simple roughened morphology after roughening, and the roughening effect is not ideal.

Method used

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  • An infrared light-emitting diode with multiple roughened layers
  • An infrared light-emitting diode with multiple roughened layers
  • An infrared light-emitting diode with multiple roughened layers

Examples

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Embodiment 1

[0051] refer to Figure 1 to Figure 3 As shown, Embodiment 1 of an infrared light-emitting diode with multiple roughened layers disclosed by the present invention, figure 1 It is an epitaxial structure of a near-infrared light-emitting diode, comprising a buffer layer 2, an etching cut-off layer 3, a roughened layer 4, a roughened cut-off layer 5, a first-type conductive layer 6, The active layer 7, the second-type conductive layer 8, and the epitaxial substrate 1 are GaAs substrates.

[0052] The roughened layer 4 is composed of a first roughened layer 41 , a second roughened layer 42 and a third roughened layer 43 , the first roughened layer 41 is the outermost roughened layer away from the active layer 7 . The composition material of the roughening layer 4 is AlGaAs, specifically: the first roughening layer 41 is Al 0.3 Ga 0.7 As material, and the thickness of the first roughening layer 41 is 300nm; The second roughening layer 42 is Al 0.5 Ga 0.5 As material, and the t...

Embodiment 2

[0067] refer to Figure 4 to Figure 6 As shown, the second embodiment of an infrared light-emitting diode with multiple roughened layers disclosed by the present invention, Figure 4 It is an epitaxial structure of a near-infrared light-emitting diode, including a buffer layer 2, an etching cut-off layer 3, a roughened layer 4, a roughened cut-off layer 5, and a first-type conductive layer 6 sequentially formed on the upper surface of an epitaxial substrate 1 from bottom to top. , an active layer 7, a second-type conductive layer 8, and the epitaxial substrate 1 is a GaAs substrate.

[0068] The roughening layer 4 is made of the first roughening layer 41, the second roughening layer 42, the third roughening layer 43, the fourth roughening layer 44, and the fifth roughening layer 45. The first roughening layer 41 is away from the The outermost roughening layer of the source layer 7. The composition material of the roughening layer 4 is AlGaAs, wherein the material of the firs...

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Abstract

The invention discloses an infrared light emitting diode with multiple coarsening layers. A light emitting structure is formed on a substrate, and the N coarsening layers are formed on the light emitting structure, wherein N is larger than or equal to three. First electrodes are formed on the coarsening layers, and a second electrode is formed on the other face of the substrate. Coarsening interfaces are formed on the surfaces and the side faces of the different coarsening layers. According to the infrared light emitting diode with the multiple coarsening layers, total reflection, occurring on a light emitting interface, of an active layer can be reduced, the light emitting area of the surface of the diode is increased, and the external quantum efficiency of the infrared light emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of infrared light emitting diodes, in particular to an infrared light emitting diode with multiple roughened layers. Background technique [0002] Due to the advantages of low power consumption, small size and high reliability, infrared light-emitting diodes are widely used in communication, remote sensing devices and other fields. [0003] In the prior art, a relatively high internal quantum efficiency can be achieved by using metal organic compound vapor phase epitaxy to grow an epitaxial structure with quantum wells. However, due to the large refractive index difference between the epitaxial material and air, it is easy to cause total reflection of the active layer on the light-emitting interface. Therefore, the surface of the light-emitting interface is usually roughened. Surface roughening technology improves the light extraction of light-emitting diodes. rate, significantly improving the external quan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/22H01L33/58H01L33/60H01L33/00
CPCH01L33/10H01L33/22H01L33/32
Inventor 林志伟陈凯轩张永杨凯蔡建九白继锋卓祥景姜伟刘碧霞
Owner XIAMEN CHANGELIGHT CO LTD
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