Junction barrier Schottky diode

Abstract

A junction barrier Schottky diode comprises a silicon substrate which is provided with an upper surface which is provided with an N buried layer below, an N well being arranged between the upper surface and the N buried layer; a first P-type doping region which is arranged in the N well and extends downwards from the upper surface; a metal layer which is covered on the upper surface and is arranged above one side of the first P-type doping region; a second P-type doping region which arranged in the N well, extends downwards from the upper surface, and is arranged at the other side of the first P-type doping region; and a first N-type doping region which arranged in the N well, extends downwards from the upper surface, and is arranged at the other side of the first P-type doping region.

Description

[0001] 【Technical field】 [0002] The present invention relates to a Junction Barrier Schottky Diode (JBS Diode), in particular to a Junction Barrier Schottky Diode with better electrostatic discharge (Electrostatic Discharge) effect. [0003] 【Background technique】 [0004] figure 1 It is a cross-sectional structure diagram of a common junction barrier Schottky diode 100 . The junction barrier Schottky diode 100 includes a silicon substrate 110 , a field oxide layer (field oxide) 120 , a field oxide layer 130 , a plurality of P-type doped regions 140 , a metal layer 150 , and an N-type doped region 160 . [0005] The silicon substrate 110 has an upper surface 111 . The silicon substrate 110 has an N-type buried layer 112 (N buried layer, NBL) below the upper surface 111 . An N-type well 113 (Nwell) is formed between the upper surface 111 of the silicon substrate 110 and the N-type buried layer 112 . The field oxide layer 120 and the field oxide layer 130 are respectively d...

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Problems solved by technology

However, the addition of electrostatic discharge components will increase the size and cost of the device

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