Thermal field system for sapphire single crystal growth

Abstract

The invention discloses a thermal field system for sapphire single crystal growth. The thermal field system comprises a furnace body as well as heating devices and a heat-preservation layer, wherein a crucible holding area is arranged inside the furnace body; the heating devices and the heat-preservation layer are arranged in sequence from inside to outside around the crucible holding area; at least one part of the heat-preservation layer at the bottom of the crucible holding area serves as a lifting heat-preservation layer. A support column for holding a crucible is arranged at the bottom of the furnace body in a penetration manner, and the lifting heat-preservation layer sleeves the support column. Two groups of heating devices are adopted to control the crystal growth and tempering process, and the two groups of heating devices are respectively side heating devices and lower heating devices and are independently controlled by using respective independent power supplies respectively. According to the thermal field system for sapphire single crystal growth, independent control and cooperation of multiple heating devices is adopted, and with the combination of the lifting heat-preservation layer at the bottom, the purpose that growth and tempering of a crystal are completed in one same thermal field system is achieved, the thermal field system is simple in structure and stable and precise in production control, and a high-quality sapphire single crystal can grow while the production cost is lowered.

Description

technical field [0001] The invention relates to the field of sapphire manufacture, in particular to a thermal field system for sapphire single crystal growth. Background technique [0002] The HEM method (Heat Exchange Method) is a crystal growth method driven by bottom cooling heat exchange. In this method, the thermal field system, the crucible and the crystal do not need any physical movement during the crystal growth process, and the crystal growth depends entirely on heat. The temperature gradient formed by the field system and the heat conduction through the bottom are completed. [0003] The invention patent document with the application publication number CN 102425006 A discloses a thermal field for growing ingot polysilicon by directional solidification method. The furnace chamber is composed of an upper furnace body and a lower furnace body. The heat preservation chamber composed of the side wall and the bottom plate of the heat preservation chamber is provided wi...

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Problems solved by technology

[0008] 1. Using helium cooling to drive growth, the flow rate of helium is difficult to control accurately, which will affect the stability of crystal growth, and both growth and protection gas need to consume a large amount of helium, which is costly;

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