Preparation technology for mask plate

A technology of manufacturing process and mask plate, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of size deviation, rough and not smooth opening wall, poor control of effective deposition opening size accuracy, etc. , to achieve the effect of smooth side wall, easy opening precision, and improved evaporation film formation rate

Inactive Publication Date: 2014-12-17
KUN SHAN POWER STENCIL
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, double-sided etching is used to etch from both sides of the tile sheet respectively, and the formed section is a gourd-shaped opening. However, since the etching is a subtractive process and there is side corrosion, the size accuracy of the effective deposition open

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation technology for mask plate
  • Preparation technology for mask plate
  • Preparation technology for mask plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0078] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0079] In describing the present invention, it should be understood that the terms "upper", "lower", "bottom", "top", "front", "rear", "inner", "outer", "left", " The orientation or positional relationship indicated by "right", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, so as to Specific orien...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A disclosed preparation technology for a mask plate comprises: firstly electroforming an electroformed layer through an electroforming technology, and then etching an etched groove with certain depth at the opening side of the electroformed layer through an etching technology, wherein the electroforming technology comprises first film pasting, first exposuring, first developing, electroforming and first film removing, and the etching technology comprises secondary film pasting, secondary exposuring, secondary developing, etching, and secondary film removing. The mask plate prepared by employing the provided technology has the opening formed by combining of an electroforming opening and the etched groove, the electroforming opening has smooth sidewall and is easy for demolding, the effective deposition opening precision is easily controlled, and the opening precision is improved; and the etched groove prepared by using the etching technology on the basis of an electroformed opening forms a bowl-shaped hole wall and is combined with the electroformed opening, due to the fact that the bowl-shaped hole wall has a large conicity, shielding of the hole wall to an evaporation material during evaporation is avoided, and the evaporation film-forming rate is improved.

Description

technical field [0001] The invention relates to a manufacturing process of a mask plate for evaporation, in particular to a manufacturing process of a mask plate for OLED evaporation. Background technique [0002] Organic Light-Emitting Diode (OLED), the main structure is composed of an anode (first electrode), a cathode (second electrode) and an organic light-emitting layer between the anode and the cathode, a multilayer with better luminous efficiency The PM-OLED structure also needs to make a hole injection layer (Hole Inject Layer; HIL) and a hole transport layer (Hole Transport Layer; HTL) between the anode and the organic layer, and make an electron transport layer between the organic layer and the cathode ( Electron Transport Layer (ETL), electron injection layer (Electron Inject Layer; EIL) and other structures. The light-emitting mechanism of OLED is to inject electrons and holes from the cathode and anode respectively. The injected electrons and holes are transpor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/04
Inventor 魏志凌高小平潘世珎张炜平
Owner KUN SHAN POWER STENCIL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap