Check patentability & draft patents in minutes with Patsnap Eureka AI!

Manufacturing method and device for transparent conductive film, sputtering target and transparent conductive film

A technology of a transparent conductive film and a manufacturing method, which can be used in cable/conductor manufacturing, sputtering coating, conductive layer on an insulating carrier, etc., can solve problems such as low solubility, difficulty in high etching selectivity, etc.

Inactive Publication Date: 2014-12-17
ULVAC INC
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the solubility of the crystallized ITO film in weak acids such as oxalic acid is low, and it is necessary to use strong acids such as hydrochloric acid or sulfuric acid as an etching solution.
Therefore, it is difficult to ensure a high etching selectivity ratio between the ITO film and its underlying film or other wiring layers, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method and device for transparent conductive film, sputtering target and transparent conductive film
  • Manufacturing method and device for transparent conductive film, sputtering target and transparent conductive film
  • Manufacturing method and device for transparent conductive film, sputtering target and transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0102] A sputtering target in which 1.5 atomic % of dysprosium oxide was added to indium tin oxide (hereinafter also referred to as "Dy-added ITO target") was manufactured. Using this Dy-added ITO target, given by figure 1 The sputtering setup shown forms a film on a substrate with a thickness of ITO film (hereinafter also referred to as "Dy-added ITO film"). The film forming condition is set to DC power of 600W (1.16W / cm 2 ), the distance between the target and the substrate (T / S distance) is 100mm, the magnetic field of the magnet unit is 300G, and the film formation rate (dynamic rate) is m / min. A mixed gas of argon and oxygen was used as the sputtering gas, and a plurality of ITO film samples were formed by varying the oxygen partial pressure. Among them, the partial pressure of argon is set to 0.67Pa (200sccm), the partial pressure of oxygen is set to 0Pa, 1.33×10 -3 Pa, 2.66×10 -3 Pa, 5.32×10 -3 Pa, 7.98×10 -3 Pa, 1.06×10 -2 Pa.

[0103] For an oxygen partial...

Embodiment 2

[0105] A sputtering target in which 1 atomic % of boron oxide was added to indium tin oxide (hereinafter also referred to as "B-added ITO target") was manufactured. Using this B-added ITO target, an ITO film (hereinafter also referred to as "B-added ITO film") was formed under the same conditions as in Example 1. For the formed B-added ITO film, the etching rate, resistivity, light transmittance, and X-ray diffraction intensity before and after annealing were measured under the same conditions as in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

Disclosed is a transparent conductive film manufacturing method which enables the formation of a transparent conductive film having excellent etching properties and conductivity, without using water vapour. The disclosed manufacturing method for a transparent conductive film comprises a step wherein an indium tin oxide thin film is formed on a substrate by sputtering a target material containing a first component which is formed from indium oxide, a second component which is formed from tin oxide, and a third component which is formed from at least one element, or the oxide thereof, selected from among La, Nd, Dy, Eu, Gd, Tb, Zr, Al, Si, Ti, and B. The method further comprises a step wherein the indium tin oxide thin film is patterned using an etching solution, and a step wherein the indium tin oxide thin film is crystalised by means of heat treatment. Due to the above method the ITO film can be etched by a weak acid immediately after film formation and a desired conductivity can be imparted to the ITO film.

Description

[0001] This application is a divisional application filed on November 16, 2010 with the application number 201080051495.0 and the title of the invention is "Manufacturing Method of Transparent Conductive Film, Manufacturing Device of Transparent Conductive Film, Sputtering Target and Transparent Conductive Film". technical field [0002] The present invention relates to a method for manufacturing a transparent conductive film superior in etching properties, conductive properties, etc., a manufacturing device for the transparent conductive film, a sputtering target, and a transparent conductive film. Background technique [0003] In the field of manufacturing flat panel displays and solar power generation modules, ITO (Indium tin oxide) films mainly composed of indium oxide and tin oxide are widely used as transparent conductive films. The ITO film is formed by a vacuum evaporation method, a sputtering method, or the like, and in the sputtering method, a sputtering target made...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00C23C14/08H01B5/14C23C14/34
CPCC23C14/3414C23C14/08
Inventor 汤川富之武井応树小林大士赤松泰彦清田淳也增泽健二石桥晓
Owner ULVAC INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com