Full-dielectric reflecting film and manufacturing method thereof

A reflective film and all-dielectric technology, applied in gaseous chemical plating, coatings, instruments, etc., can solve problems such as long time-consuming, difficult production, discontinuous production process of reflective film, etc., to achieve continuous process and strong practical significance Effect

Inactive Publication Date: 2014-12-24
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

[0004] The high-refractive index film layer and the low-refractive-index film layer of the traditional total dielectric reflective film are made of different materials, and the high-refractive index film layer and the low-refractive index film layer need to be plated separately, that is, different eq

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  • Full-dielectric reflecting film and manufacturing method thereof
  • Full-dielectric reflecting film and manufacturing method thereof

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Embodiment Construction

[0025] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0026] Such as figure 2 As shown, the total dielectric reflection film includes a substrate 1 and a multilayer high refractive index film layer 2, and the multilayer high refractive index film layer 2 is sequentially stacked on the upper surface of the substrate 1, and the two adjacent layers A low-refractive-index film layer 3 is arranged between the high-refractive-index film layers 2, which is characterized in that: the high-refractive-index film layer 2 has a density of 2.15-2.32g / cm 3 amorphous silicon thin film, the low refractive index film layer 3 has a density of 1.90-2.10g / cm 3 amorphous silicon thin film. The total dielectric reflection film of the present invention adopts a density of 2.15-2.32g / cm 3 The amorphous silicon thin film is made into a high refractive index film layer 2, and the density is 1.90-2.10g / cm 3 The amor...

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Abstract

The invention discloses a full-dielectric reflecting film and a manufacturing method thereof. The full-dielectric reflecting film is continuous in manufacturing process, low in the manufacturing cost and convenient to manufacture. An amorphous silicon film with the density of 2.15-2.32 g/cm <3> is adopted and manufactured into a high-refractive-index film layer, an amorphous silicon film with the density of 1.90-2.10 g/cm <3> is adopted and manufactured into a low-refractive-index film layer, and the amorphous silicon films are adopted for both the high-refractive-index film layer and the low-refractive-index film layer. The amorphous silicon films with the different densities can be obtained only by alternately changing reaction conditions in the PECVD process. Only amorphous Silicon is adopted as film layer materials for the structure of the reflecting film, so that the reflecting layer has the advantages that the process is continuous, and film formation is achieved at one time. Meanwhile, the reflecting film can be manufactured at low cost and on a large scale because of the mature amorphous silicon film production process and has high practical significance. The reflecting film is suitable for being applied and popularized in the field of optical devices.

Description

technical field [0001] The invention relates to the field of optical devices, in particular to a total dielectric reflection film and a preparation method thereof. Background technique [0002] Optical film is an important part of modern optical instruments and various optical devices. It is based on the interference of light and realizes its function by changing the light intensity and polarization state of transmitted or reflected light. Among them, optical reflective films occupy an extremely important position and are widely used in military and civilian fields. [0003] Reflective film mainly realizes energy reflection, including metal reflective film and total dielectric reflective film. Metal reflective films are not widely used in optical devices due to large light loss. The all-dielectric reflective film is based on multi-beam interference. The traditional all-dielectric reflective film is made of optical thickness λ 0 / 4(λ 0 is the incident light wavelength) hi...

Claims

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Application Information

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IPC IPC(8): G02B5/08G02B1/10C23C16/24
Inventor 刘爽陈逢彬陈静李尧熊流峰张尚剑刘永钟智勇
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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