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mz-type light intensity modulator with integrated photodetector

A light intensity modulator and photodetector technology, which is applied in the fields of instruments, optics, nonlinear optics, etc., can solve the problems of high production cost, difficult process, complex structure, etc., and achieve the effect of reducing process difficulty and production cost

Active Publication Date: 2017-05-17
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this solution, precise micro-optical components are required, and the structure is complex, making it difficult to realize the process
[0007] Generally speaking, the two technical solutions of branched waveguides and micro-optical elements have problems such as complex structures, difficult processes, and high production costs.

Method used

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  • mz-type light intensity modulator with integrated photodetector
  • mz-type light intensity modulator with integrated photodetector
  • mz-type light intensity modulator with integrated photodetector

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Embodiment Construction

[0020] specific implementation plan

[0021] An MZ-type light intensity modulator integrated with a photodetector, the innovation of which is: the MZ-type light intensity modulator integrated with a photodetector includes a MZ-type light intensity modulator chip 1, a photodetector chip 2 and a package The tube shell; the photodetector chip 2 is arranged at the position of the waveguide combining point A on the output side of the MZ type light intensity modulator chip 1; the photosensitive surface of the photodetector chip 2 is opposite to the waveguide combining point A, and The photosensitive surface of the photodetector chip 2 completely covers the waveguide combining point A, and the photosensitive surface and the waveguide combining point A are bonded and fixed by optical glue; The lead-out electrode of the shell is bonded and connected.

[0022] Further, the photodetector chip 2 is a photodetector chip with a back-illuminated structure.

[0023] The working principle of...

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Abstract

The invention discloses an MZ light intensity modulator integrated with a photoelectric detector. The MZ light intensity modulator integrated with the photoelectric detector is characterized by comprising an MZ light intensity modulator chip, a photoelectric detector chip and an encapsulation tube shell; the photoelectric detector chip is arranged at a waveguide bundling point on the output side of the MZ light intensity modulator chip; the photosurface of the photoelectric detector chip is opposite to the waveguide bundling point and completely covers the waveguide bundling point, and the photosurface and the waveguide bundling point are bonded and fixed through an optical adhesive; an electrode pin of the photoelectric detector chip is in bonding connection with an extraction electrode of the encapsulation tube shell through a gold wire. The MZ light intensity modulator integrated with the photoelectric detector has the advantages that the technological difficulty and the production cost for integrating the photoelectric detector in the MZ light intensity modulator are lowered.

Description

technical field [0001] The invention relates to an MZ type light intensity modulator, in particular to an MZ type light intensity modulator integrated with a photodetector. Background technique [0002] The waveguide optical intensity modulator based on the Mach-Zehnder structure (hereinafter referred to as the MZ optical intensity modulator) has the advantages of broadband operation, high modulation rate, and large extinction ratio. Process key electro-optic modulation devices in systems such as processing. [0003] Since the transfer function of the MZ-type optical intensity modulator is a nonlinear function, in order to use different modulation regions in practical applications, it is necessary to load a bias voltage on the bias electrode of the device to set a suitable bias operating point, such as an orthogonal point. It is used for non-return-to-zero code modulation, and the minimum power transfer point is used to generate phase modulation signals; however, affected b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/035
Inventor 田自君胡红坤李薇朱学军华勇
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP