Production method of stacked nanowire

Abstract

The invention discloses a production method of a stacked nanowire. The production method includes steps of a, forming a hard mask on a substrate; b, etching the substrate to form a first trench; c, forming a bottom etching stopping layer at the bottom of the first trench; d, etching the first trench and forming a second trench in the side of the first trench; e, smoothing fins to form the stacked nanowire. According to the arrangement, dry etching is combined with wet etching, vertical pitch is controlled by the dry etching, and the etching stopping layer is injected to control the wet etching, in this way, the precision of the stacked nanowire is increased, and minimization of device is facilitated.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing stacked nanowires. Background technique [0002] In the current sub-20nm technology, the three-dimensional multi-gate device (FiinFET or Trii-gate) is the main device structure, which enhances the gate control ability and suppresses leakage and short channel effects. [0003] For example, compared with traditional single-gate bulk Si or SOI MOSFETs, MOSFETs with double-gate SOI structures can suppress short-channel effects (SCE) and drain-induced barrier lowering (DIBL) effects, have lower junction capacitance, and can realize The channel is lightly doped, and the threshold voltage can be adjusted by setting the work function of the metal gate, which can obtain about 2 times the driving current and reduce the requirements for the effective gate oxide thickness (EOT). Compared with the double-gate device, the gate of the triple-gate d...

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Problems solved by technology

However, this method is difficult to control the uniformity of the trench (nanowire) shape in the vertical direction, for example, the upper and lower endpoints of the trench a

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