Method for preparing high-quality gallium nitride nano powder

A nano-gallium nitride high-quality technology, applied in nanotechnology, nanotechnology, nitrogen-metal/silicon/boron binary compounds, etc., can solve the problems of low crystallinity quality of GaN products and limited application range of products

Inactive Publication Date: 2015-01-14
SHANGRAO NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

(CN101845671B) but due to the use of soluble salt Na 2 SO 4 The melting and boiling points of GaN are low (the melting point is lower than 850 ° C, and decomposition occurs at the same time), which limits the nitriding temperature to not be higher than 800 ° C, so the crystallinity quality of the final GaN product is not high, which also limits the product. scope of application

Method used

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  • Method for preparing high-quality gallium nitride nano powder
  • Method for preparing high-quality gallium nitride nano powder
  • Method for preparing high-quality gallium nitride nano powder

Examples

Experimental program
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Embodiment 1

[0010] Thoroughly grind 1 g of metal Ga and 3 g of sodium phosphate at 29 °C, and then nitride the mixture of metal Ga and sodium phosphate in a tube furnace at 750 °C for three hours, followed by repeated washing of the nitrided mixture with distilled water. Sodium phosphate is removed, and finally pure GaN powder is obtained. The product is named GaN750, and the characterization of the product is as follows figure 2 and image 3 shown.

Embodiment 2

[0012] Fully grind metal Ga and sodium phosphate mixture at a ratio of 1:3 at 29°C, then nitride the uniformly mixed metal Ga and sodium phosphate mixture in a tube furnace at a temperature of 850°C with ammonia gas, and then rinse repeatedly with distilled water The nitridated mixture washes off the sodium phosphate, and finally a pure GaN powder is obtained. The product is named GaN850, and the characterization of the product is as follows figure 2 and image 3 shown.

Embodiment 3

[0014] Fully grind metal Ga and sodium phosphate mixture at a ratio of 1:3 at 29°C, and then nitrogenize the uniformly mixed metal Ga and sodium phosphate mixture with ammonia gas in a tube furnace at a temperature of 950°C, and then rinse repeatedly with distilled water The nitridated mixture washes off the sodium phosphate, and finally a pure GaN powder is obtained. The product is named GaN950, and the characterization of the product is as follows figure 2 and image 3 shown.

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Abstract

The invention discloses a method for preparing high-quality gallium nitride nano powder. The method comprises the following steps: fully mixing and grinding metal Ga and soluble salt sodium phosphate according to the mass ratio of 1 to (2-10) at certain temperature, and then nitriding the mixture with ammonia gas at 750-1050 DEG C for 2-4 hours; repeatedly washing the nitrided mixture to wash off sodium phosphate by using distilled water to finally obtain pure high-quality gallium nitride nano powder, wherein the diameters of the particles are 10-30nm. Particularly, the obtained product is gallium nitride powder with high crystallinity in a hexagonal phase structure when nitriding is performed at over 850 DEG C. The method has positive effects of being simple, convenient, economical and environment-friendly, and can be used for preparing the high-quality gallium nitride nano powder on a large scale.

Description

technical field [0001] The invention relates to a method for preparing high-quality gallium nitride nanometer powder. Background technique [0002] Gallium Nitride (GaN) is a semiconductor material with direct bandgap and wide bandgap, which has a wide range of applications in optoelectronic and microelectronic devices. At present, its research and application have become the frontier and hot spot of global semiconductor research. Scientific researchers have conducted a lot of in-depth research on the preparation of GaN powder. At present, people generally use three methods: solid-phase method, liquid-phase method and gas-phase method to obtain a large amount of GaN powder. Some general-purpose gallium-based precursors are basically gallium oxide, gallium chloride, or gallium-containing organic compounds. Most of these gallium-based substances are expensive, air-sensitive or even highly toxic. These unfavorable factors will increase the cost of synthesizing GaN, and In th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/06B82Y30/00
Inventor 余乐书吕英英刘绥阳
Owner SHANGRAO NORMAL UNIV
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