Method synthesizing nanocrystalline by assistance of soluble salt

Abstract

The invention relates to a method synthesizing nanocrystalline by the assistance of soluble salt. Soluble salt sodium sulfate Na2SO4 and soft metal are fully grinded or ball milled according to the proportion of 1 to 6-30 at a certain temperature or normal temperature and then the mixture of the soft metal and the sodium sulfate Na2SO4 is nitrided with ammonia or oxygenized with oxygen at 600 to 800 degrees centigrade for 2 to 4 hours. The nitrided or oxygenized mixture is flushed repeatedly with distilled water to wash away the sodium sulfate and obtain pure nanocrystalline powder. The method is simple, convenient, economical and environment-friendly, can be used to prepare the nanocrystalline massively and at the same time provides a universal thinking for synthesizing low melting point soft metal compound nanocrystalline in large quantity.

Description

technical field [0001] The invention relates to a method for preparing nanocrystals, in particular to a method for assisted synthesis of nanocrystals by soluble salts. Background technique [0002] In the past few decades, the synthesis of inorganic semiconductor nanocrystals has received increasing attention, because these nanocrystals have properties that their bulk materials cannot possess in the fields of electronics, optics, and magnetism (Acc. Chem. Res. 1999, 32, 407-414.). Gallium nitride (GaN), as one of the most important wide-bandgap semiconductor materials, has received the most central attention since it was successfully fabricated into high-efficiency blue light-emitting diodes (Appl.Phys.Lett.1993, 62, 2390-2392.Properties , Processing, and Applications of Gallium Nitride and Related Semiconductors, Part AINSPEC: London, 1999.) Generally speaking, a large amount of GaN powder should be obtained by directly nitriding metal Ga with ammonia or nitrogen at a high...

AI Technical Summary

Problems solved by technology

Chen et al. used Ga 2 o 3 Powder and amorphous CN x GaN nanoparticles are prepared by carbothermal reduction process under high pressure (J.Am.Chem.Soc.2005, 127, 15722-15723.), but due to the possible explosion will limit the preparation of large-scale GaN nanoparticles, and Residual carbon is difficult to remove from the product

Although GaN products can be prepared on a large scale by using gallium halide and alkali metal nitride through solid-state metathesis, this type of uncontrollable reaction will lead to a high temperature of the reaction system (over 1000 ° C), which It is bound to cause the decomposition of part of GaN and cause losses (J. Phys. Chem. B 2001, 105, 11922-11927. Chem. Mater. 1999, 11, 2299-2301.)

Images