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Semiconductor device and method for improving breakdown voltage of semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices and improving the breakdown voltage of semiconductor devices, can solve problems such as device failure and durability

Active Publication Date: 2018-03-30
ANALOG DEVICES INT UNLTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, devices using this technology will not be as durable as desired

Method used

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  • Semiconductor device and method for improving breakdown voltage of semiconductor device
  • Semiconductor device and method for improving breakdown voltage of semiconductor device
  • Semiconductor device and method for improving breakdown voltage of semiconductor device

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Embodiment Construction

[0038] In this specification, terms such as horizontal, vertical, upper, lower, left, right, etc. are only used to describe the relative relationship of objects as shown in the drawings, and are not interpreted as limitations within the actual semiconductor device. The relative concentrations of donor and acceptor within the device can be specified as N and P, corrected by "-" to indicate reduced doping or "+" to indicate enhanced doping. These notations are well known to those skilled in the art.

[0039] FIG. 1 is a schematic diagram of a known field effect transistor, generally designated 1 . In order to facilitate the reader's understanding of the benefits provided by the teachings of the present disclosure, a discussion of the structure of known field effect transistors and some of the mechanisms leading to the degradation of their breakdown performance is provided.

[0040] The field effect transistor shown in FIG. 1 includes a body region 10 which, in this embodiment, ...

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Abstract

A semiconductor device having a first layer adjacent to a semiconductor layer, further comprising at least one field modifying structure positioned such that, in use, a potential at the field modifying structure is such that the semiconductor layer is modified The E-field vector at the interface region with the first layer.

Description

technical field [0001] The present disclosure relates to improvements in the performance of semiconductor devices such as field effect transistors. Background technique [0002] High voltage field effect transistors are known. A limitation on the performance of such devices is the maximum voltage across the device that the device can withstand before the breakdown mechanism causes the current flow in the device to increase in an uncontrolled manner. This results in a loss of control of the device and, often, failure of the device due to ohmic heating of the device. One known method of increasing the breakdown voltage is to use "field plates" on the device to allow the depletion region to extend over a larger distance, thereby reducing the local electromagnetic strength. However, devices using this technology will not be as durable as desired. Contents of the invention [0003] This document discloses methods and structures for modifying the direction of an electric fiel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/775H01L21/335
CPCH01L29/063H01L29/1095H01L29/66681H01L29/7824H01L29/404H01L29/402H01L29/1083H01L29/42368H01L29/0878H01L29/66477H01L29/78
Inventor E·J·考尼B·P·O·O·汉娜伊德S·P·威斯顿W·A·拉尼D·P·迈克奥里菲
Owner ANALOG DEVICES INT UNLTD