Metallic oxide thin film transistor, array substrate, manufacturing method and display device
A technology of oxide thin film and production method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, electric solid-state device, etc., can solve the problem that the oxide active layer pattern is difficult to control, etc., so as to save production time, solve difficult-to-control, reduce The effect of production costs
Inactive Publication Date: 2015-01-28
BOE TECH GRP CO LTD
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to provide a metal oxide thin film transistor, an array substrate and a manufacturing method, and a display device, which can solve the problem that the pattern of the oxide active layer formed by wet etching is difficult to control
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[0041] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.
[0042] The embodiments of the present invention aim at the problem in the prior art that it is difficult to control the pattern of zinc oxynitride formed by wet etching, and provide a metal oxide thin film transistor, an array substrate and a manufacturing method, and a display device, which can solve the problem of using wet etching to form zinc oxynitride patterns. It is difficult to control the pattern of the oxide active layer formed by etching.
[0043] An embodiment of the present invention provides a method for manufacturing a metal oxide thin film transistor. The manufacturing method includes a step of forming a pattern of an oxide active layer, and the step of forming a pattern of an oxide active layer includes:
[0044] Formi...
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The invention provides a metallic oxide thin film transistor, an array substrate, a manufacturing method and a display device, and belongs to the field of the thin film transistor manufacturing technology. The manufacturing method of the metallic oxide thin film transistor comprises the step of forming a pattern of an oxide active layer, wherein a plurality of inverted tabletop structures made of photosensitive materials are formed on the substrate, an oxide active layer thin film is formed on the substrate with the inverted tabletop structures, the substrate with the oxide active layer thin film is soaked into an organic solvent, and the photosensitive materials on the substrate are dissolved away to form the pattern of the oxide active layer. According to the technical scheme, the problem that the pattern, formed by wet etching, of the oxide active layer is hard to control can be solved.
Description
technical field [0001] The invention relates to the field of thin film transistor manufacturing technology, in particular to a metal oxide thin film transistor, an array substrate, a manufacturing method, and a display device. Background technique [0002] Zinc oxynitride (ZnON) is a high-mobility semiconductor material, and the use of zinc oxynitride to make the active layer of a thin film transistor (TFT) is conducive to improving the performance of TFT devices. [0003] The existing process for forming zinc oxynitride patterns includes four steps: "deposition of zinc oxynitride---photoresist exposure and development----etching------stripping off photoresist". When forming the pattern of zinc oxynitride, since the dry etching rate of zinc oxynitride is very slow, it is not suitable to use dry etching to form the pattern of zinc oxynitride. When using wet etching to form the pattern of zinc oxynitride, the choice of etching solution is very critical. Since zinc oxynitride ...
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IPC IPC(8): H01L29/786H01L27/12H01L21/77G02F1/1368
CPCH01L29/66742G02F1/1368H01L27/1214H01L29/22H01L29/7869
Inventor 刘英伟王美丽
Owner BOE TECH GRP CO LTD