Intermittent annealing isothermal growth multi-quantum well LED epitaxial structure and fabrication method

Abstract

The invention discloses a method for manufacturing a multi-quantum well LED epitaxial structure grown at the same temperature by intermittent annealing, comprising the following steps: preparing a substrate, and treating the substrate at a high temperature under a hydrogen atmosphere; layer, n-GaN layer; periodically grow MQW active layer on n-GaN layer; grow p-GaN and P-type contact layer sequentially on MQW active layer; said MQW active layer is composed of at least two multi-quantum Each multi-quantum well layer is composed of an InGaN quantum well layer, a GaN protective layer and a GaN quantum barrier layer, and each layer in each multi-quantum well is grown at the same temperature. After the interval annealing treatment in the middle, the present invention has more uniform crystal plane orientation and higher crystal lattice quality; obtains a high-quality quantum well structure layer, improves luminous efficiency by more than 10%, and saves a large amount of original multi-quantum well layer The heating and cooling time is moderate, and the production capacity is significantly improved; the surface of the low-temperature GaN material is smoothed, so as to realize the uniform two-dimensional growth of the barrier and obtain high-quality multiple quantum well materials.

Description

technical field [0001] The invention belongs to the field of LED epitaxial technology growth, and in particular relates to a multi-quantum well LED epitaxial structure and a manufacturing method for multiple intermittent annealing and recrystallization growth. Background technique [0002] LED has now entered the stage of commercial production. How to further shorten the growth time of epitaxial wafers to increase production capacity under the premise of obtaining high-quality epitaxial wafers has become a focus of the industry. [0003] At present, MOCVD is used for the commercial production of epitaxial wafers. However, due to the difference in the temperature atmosphere for the growth of InGaN quantum wells and GaN quantum barriers, the InGaN quantum well layer can be grown in a high temperature environment and H 2 In the growth atmosphere, In is easy to precipitate and dissociate, and cannot effectively form devices and quantum well layers, while the GaN quantum barrier ...

AI Technical Summary

Problems solved by technology

This contradiction is one of the main bottlenecks restricting the development of GaN-based LED epitaxial technology. At the same time, in this growth mode, due to the need to continuously switch between high and low growth temperatures, a large amount of temperature Ramp is required, resulting in the current LED industry. Overall low; considering that in the entire epitaxial process of MOCVD epitaxial growth LED, the MQW growth time occupies half of the total epitaxial wafer growth time, so how to shorten the MQW growth time and obtain high-quality barrier materials has become an important issue for improving GaN-based LED epitaxy. A major factor in wafer production efficiency

[0005] Under the current process conditions, growing multiple quantum wells at the same temperature cannot meet the structural design requirements for high-quality quantum barriers. The quantum barriers formed have a high dislocation density and cannot effectively form an effective barrier for electron-hole pairs, which affects the luminous efficiency.

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