Excimer laser annealing device and using method thereof

A technology of excimer laser and excimer laser, which is applied in laser welding equipment, electrical components, circuits, etc., can solve the problems of small polysilicon grains, affecting the electron mobility of polysilicon, and affecting the display effect of the display, so as to achieve the effect of improving the effect

Active Publication Date: 2015-02-18
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF6 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the current excimer laser beam is evenly irradiated on the amorphous silicon thin film layer, the temperature of each part of the amorphous silicon thin film layer is roughly equal, so the starting point and direction of recrystallization cannot be

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Excimer laser annealing device and using method thereof
  • Excimer laser annealing device and using method thereof
  • Excimer laser annealing device and using method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar units are denoted by the same reference numerals.

[0032] Please refer to figure 1 , figure 1 It is a schematic structural diagram of an excimer laser annealing device according to the first embodiment of the present invention.

[0033] Excimer laser annealing device of the present invention, as figure 1 As shown, it includes a substrate carrier 10 and an excimer laser 20. The substrate carrier 10 includes a beari...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an excimer laser annealing device and a using method thereof. The device comprises a substrate loading table and an excimer laser device used for emitting excimer laser beams to a substrate. The substrate loading table comprises a loading surface used for loading the substrate with an amorphous silicon film, and a temperature adjusting module; the temperature adjusting module is used for adjusting the temperature of the loading surface and controlling the crystallization direction of amorphous silicon of the amorphous silicon film. According to the excimer laser annealing device and the using method thereof, the temperature adjusting module is arranged on the substrate table, a region with temperature gradients is formed, the amorphous silicon is recrystallized in the temperature adjusting direction, polysilicon with larger grain sizes is obtained, and the effect of a liquid crystal display is improved.

Description

【Technical field】 [0001] The invention relates to the technical field of liquid crystal displays, in particular to an excimer laser annealing device and a method for using the device. 【Background technique】 [0002] With the wide application of polysilicon components, the formation method of polysilicon has also become the main research direction. Among them, the excimer laser annealing process is an important step in the formation of polysilicon. In the traditional excimer laser annealing process, amorphous silicon becomes completely molten after being subjected to high temperature, and then recrystallized to form polysilicon. During recrystallization, it will crystallize in the direction of low energy to high energy, that is, crystallize from low temperature to high temperature. Since the current excimer laser beam is uniformly irradiated on the amorphous silicon thin film layer, the temperature of each part of the amorphous silicon thin film layer is roughly equal, so th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/67H01L21/268B23K26/354
CPCB23K26/354H01L21/268H01L21/67H01L21/67011H01L2221/67
Inventor 姚江波
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap