A dual-core GCT with a corrugated base and a transparent short-circuited anode and its preparation method
A transparent anode, GCT-B technology, applied in circuits, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of difficult manufacturing process, difficult setting of grooves, and high requirements for GCT minority carrier lifetime control, to ensure commutation. Reliability, the effect of reducing the difficulty and cost of the manufacturing process
Active Publication Date: 2017-02-08
XIAN UNIV OF TECH
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Problems solved by technology
[0004] The purpose of the present invention is to provide a double-core GCT with a corrugated base and a transparent short-circuited anode, which solves the problems in the prior art that the trenches are difficult to set, the requirements for the minority carrier lifetime control of the GCT are high, and the manufacturing process is difficult.
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[0032] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0033] figure 1 It is the cross-sectional structure diagram of the existing D-GCT. The main body adopts a common p-base region, and there is a trench isolation between GCT-A and GCT-B, which can be etched after forming a p-base region by large-area aluminum diffusion. accomplish. In order to ensure that the groove does not affect the J 2 To widen the depletion region of the junction and obtain a good isolation effect, the trench region should be as shallow and wide as possible, but if the trench region is too wide, it will not only cause gate-cathode J 3 The leakage current of the junction increases sharply, and the surface area of the silicon wafer occupied is also large, resulting in a decrease in the effective area of the cathode.
[0034] figure 2 For the D-GCT cross-sectional structure of the present invention, the entire device...
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Abstract
The invention discloses a dual-core GCT of corrugated base regions and transparent short circuit anodes. GCT-A and GCT-B parts are identical in upward arrangement in an n-region. The n-region of the GCT-B part is downwardly provided with an n field stop layer. A p+ transparent anode region I, an n+ short circuit region and a p+ transparent anode region II are arranged side by side below the n field stop layer. Thickness of the p+ transparent anode region I and the p+ transparent anode region II is less than that of the middle n+ short circuit region. The p+ transparent anode region I is adjacent to the p+ transparent anode region of the GCT-A. A common anode aluminum electrode A is arranged below the p+ transparent anode region I, the n+ short circuit region and the p+ transparent anode region II and below the p+ transparent anode region of the GCT-A part. The invention also discloses a preparation method for the D-GCT. According to the dual-core GCT structure of the corrugated base regions and the transparent short circuit anodes, current capacity of the GCT is enhanced, total loss is reduced and control of minority carrier lifetime is eliminated.
Description
technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a double-core GCT with a wavy base and a transparent short-circuit anode, and also relates to a preparation method for the double-core GCT with a wavy base and a transparent short-circuit anode. Background technique [0002] Gate-commutated thyristor (GCT) is a new type of power semiconductor device, which is developed on the basis of gate-turn-off thyristor (GTO). Dual-core GCT or D-GCT (device) is to integrate two asymmetric GCTs with different characteristics in parallel on the same chip, one (such as GCT-A) is responsible for controlling the on-state characteristics of D-GCT, and the other ( Such as GCT-B) is responsible for controlling the turn-off characteristic of D-GCT, so that D-GCT has very low turn-on loss and turn-off loss at the same time. Therefore, it can well meet the requirements of large capacity, low loss, high reliability and integration pro...
Claims
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Login to View More IPC IPC(8): H01L27/06H01L21/822H01L21/762
Inventor 王彩琳高秀秀
Owner XIAN UNIV OF TECH