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Highly-doped phospho-silicate glass unit with protective film layer

A technology of phosphosilicate glass and protective film layer, applied in electrical components, electric solid devices, circuits, etc., can solve the problems of short shelf life, difficulty, restricting production development and other problems of doped phosphosilicate glass, so as to improve production conditions and solve shelf life problems. too short effect

Inactive Publication Date: 2015-03-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a person skilled in the art, it is easy to know that the short shelf life of doped phosphosilicate glass brings considerable difficulty to the control of subsequent processes, which seriously restricts the development of production

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  • Highly-doped phospho-silicate glass unit with protective film layer

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Embodiment Construction

[0019] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.

[0020] see figure 1 , figure 1 Shown is a schematic structural view of the highly doped phosphosilicate glass with a protective film layer in the present invention. The highly doped phosphosilicate glass 1 with a protective film layer includes: a wafer 10, and a highly doped phosphosilicate glass 11 deposited on the wafer 10, and the high A side of the doped phosphosilicate glass 11 different from the wafer 10 is provided with a non-doped silicon glass 12 .

[0021] Without limitation, the highly doped phosphosilicate glass 11 deposited on the wafer 10 can be completed in a low-pressure environment by using a plasma-enhanced chemical vapor deposition process. Among them, silane reacts with oxygen to generate silicon dioxide; phosphine...

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Abstract

A highly-doped phospho-silicate glass unit with a protective film layer comprises a wafer and highly-doped phospho-silicate glass deposited on the wafer. Non-doped silica glass is provided on one side, opposite to the other side of the wafer, close to the highly-doped phospho-silicate glass on the wafer. According to the highly-doped phospho-silicate glass unit, the non-doped silica glass helps effectively preventing the highly-doped phospho-silicate glass from absorbing moisture from the outside, the highly-doped phospho-silicate glass is protected, the defect that the shelf life of the highly-doped phospho-silicate glass is short is overcome, and production conditions of a following process are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a highly doped phosphosilicate glass with a protective film layer. Background technique [0002] At present, after the transistor device structure is completed, before entering the back-end copper process, it is usually necessary to deposit a pre-metal dielectric layer to fill the uneven gate region, source region, and drain region on the surface of the transistor. The surface is ground flat, laying the foundation for the flattening of the subsequent copper process. [0003] In the process with a line width of 130nm / 110nm, the doped phosphosilicate glass process is the core process of the deposition of the pre-metal dielectric layer. Wherein, the doped phosphosilicate glass process has excellent hole filling properties, and the phosphorus in the phosphosilicate glass can effectively capture metal ions, effectively control the impurity content in the transistor device, and...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/532
Inventor 黄冲李志国田守卫
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP