Method for obtaining monocrystalline silicon holocrystalline face etching rate under action of surface active agents

Abstract

The invention discloses a method for obtaining the monocrystalline silicon holocrystalline face etching rate under the action of surface active agents. The method comprises the steps that 1, the experiment etching rate of each constraint crystal face is obtained; 2, the value range of target parameters and an optimization population for generating the target parameters are determined; 3, a Monte Carlo S-AEP silicon atom removal probability function under the action of the surface active agents is built, and the etching probability of target atoms is calculated; 4, the stimulation etching rate of the constraint crystal face of each individual in the population is calculated; 5, a certain constraint crystal face is selected as a base crystal face, and the emulation etching rate of the constraint crystal face of each individual in the population is calculated; 6, the optimal individual in the population is screened out through an individual fitness evaluation method; 7, whether the emulation etching rate of the constraint crystal face of the optimal individual meets the output condition or not is judged, if yes, the optimal individual is output and a monocrystalline silicon full etching rate curve is generated, and if not, the optimal individual is encoded and subjected to heritable variation, a next generation of population is generated, and a new round of cycle is started.

Description

technical field [0001] The invention belongs to the field of microelectromechanical system (MEMS) bulk silicon conformal anisotropic wet etching processing and error control, and relates to the problem of Monte Carlo wet etching process model, specifically a small amount of single crystal under the action of surfactant The experimental etching rate of the silicon crystal plane obtains the etching rate of all arbitrary {h k l} crystal planes. Background technique [0002] Silicon wet etching is an important process for processing three-dimensional complex microstructures. In particular, the conformal anisotropic wet etching process after adding surfactants can be processed on silicon substrates depending on the difference in etching rates of different crystal planes. Many complex structures, such as cavity structure, cantilever structure, resonator, etc.; among them, the etching rate of each crystal plane of single crystal silicon is determined by the etching characteristics ...

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Problems solved by technology

The silicon hemisphere test method can obtain the real etching rate of all crystal planes. It is a commonly used process method at present, but its test materials are expensive, the cycle is long, and the technical requirements are high. It needs precise measurement and test equipment to complete; the interpolation calculation method uses coordinate substitution The method uses a small number of crystal surface etching rates to estimate the full crystal surface etching rate. Although the method is simple and easy to operate, the accuracy of the simulation results is not high and cannot explain the real reason of silicon etching. The accuracy is limited, especially in the maximum and minimum etching rates. There is a large error in determining the crystal plane, and it is only used as a reference method for theoretical research

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