Accelerated degradation experiment modeling method based on fuzzy theory
A technology of accelerated degradation test and fuzzy theory, which is applied in the field of accelerated degradation test, can solve the problems of fuzzy theory research of accelerated degradation test, and achieve the effect of reference value and reasonable results
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[0080] The failure mechanism of a certain transistor is analyzed, and it is found that temperature is its sensitive stress, and the accelerated degradation test of this transistor is carried out by selecting the Arrheniz model as the accelerated model. It is known that when the temperature is higher than 270°C, the degradation curve has an obvious inflection point, indicating that a new high-temperature failure mechanism has been introduced at this time. Therefore, the test temperature is within 270°C. For this reason, the temperature stress in the test was set to 200°C, 220°C, 240°C and 260°C respectively. Next sample for each stress level. The sampling interval is 0.1 hour, and 500 data are collected under each stress; the parameters in the Arrheniz model are set as: A=8.3*10 5 , Ea=0.5eV, σ=0.5; the initial value is 0, the performance threshold is 500; the actual working temperature of the product is 55°C. Experimental data are obtained through matlab simulation.
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