Ion injection machine internal beam detection system

Abstract

The invention relates to an ion injection machine internal beam detection system comprising an industrial control computer (1), optical fibers (2), a signal input and output board (3), a switching power supply (4), an I/V conversion circuit (5), a Faraday cup (6), a bidirectional air cylinder (7), a transmission bearing (8), an air channel part (9), an in-place switch (10) and a fixed supporting frame (11). The ion injection machine internal beam detection system is characterized in that beam values acquired by the Faraday cup (6) are transmitted to the industrial control computer (1) via the I/V conversion circuit (5) and the signal input and output board (3). Movement control is controlled by the air channel (9), and the position state of the bidirectional air cylinder (7) can be fed back to an upper computer (1). The beam detection system is reliable and stable in performance and has a shift selecting function, and acquisition precision is high so that the whole system can be flexibly controlled by the industrial control computer. The invention relates to an ion injection device, and belongs to the field of semiconductor manufacturing.

Description

technical field [0001] The invention relates to a semiconductor device manufacturing control system, that is, an ion implanter, in particular to a system for detecting the beam current extracted from the ion implanter. Background technique [0002] Integrated circuit manufacturing technology and technology are strategic projects related to the national economy and the people's livelihood. They are of great strategic significance to safeguarding national security and enhancing comprehensive national strength. They are a high-tech industry. At present, the types of ion implantation processes are continuously increasing, and with the narrowing of the characteristic line width and the increase of process complexity, the traditional medium beam implanter can no longer meet the requirements of this process, so the challenges faced by the ion implantation process are reflected The implantation energy develops towards the ultra-low end, while the implantation dose develops towards t...

AI Technical Summary

Problems solved by technology

At present, the types of ion implantation processes are continuously increasing, and with the narrowing of the characteristic line width and the increase of process complexity, the traditional medium beam implanter can no longer meet the requirements of this process. Therefore, the challenges faced by the ion implantation process are reflected The implantation energy develops towards the ultra-low end, while the implantation dose develops towards the high concentration. To solve this manufacturing process, it is necessary to develop a new ion implanter equipment—a low-energy and large-beam ion implanter to meet the requirements of shallow junction and large dose.

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