Manufacturing method and structure of bipolar transistor
A kind of bipolar triode, technology of manufacturing method
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[0041] Such as figure 2 Shown is the flow chart of the method of the embodiment of the present invention; Figure 3A to Figure 3E As shown, it is a device structure diagram in each step of the method of the embodiment of the present invention; the manufacturing method of the bipolar transistor of the embodiment of the present invention includes the following steps:
[0042] Step 1, such as Figure 3A As shown, an N-type lightly doped epitaxial layer 2 is grown on an N-type heavily doped substrate 1, and the epitaxial layer 2 forms a collector region of a bipolar transistor. Preferably, the substrate 1 is a silicon substrate. The N-type lightly doped concentration of the epitaxial layer 2 is: 4E15cm -3 ~5E15cm -3 .
[0043]Field oxygen 3 is formed, said field oxygen 3 defines a contact area between said collector region and said intrinsic base region 4 .
[0044] Step two, such as Figure 3B As shown, the first P-type ion implantation is performed to form the intrinsic ...
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