A sprinkler head for mocvd equipment

Abstract

The invention discloses a spray header for MOCVD equipment, belongs to a gas spray device, and aims at solving the problem in an existing spray header that a raw material gas cannot be evenly mixed, and the problem that the condition that deposition is generated at the top of the spray header, so that a nozzle is blocked is reduced. The spray header comprises a base, a lower partition plate, an upper partition plate, a head cover and a center conduit, wherein the part between the head cover and a bottom cover is partitioned into an upper gas cavity, a middle gas cavity and a bottom cavity; a plurality of upper air pipes penetrate through the upper partition plate in parallel; a plurality of lower air pipes penetrate through the lower partition plate and the bottom cover in parallel; and long jet nozzles and short jet nozzles are respectively arranged at the lower ends of the upper air pipes and the lower ends of the lower air pipes, and are evenly arranged on the lower surface of the bottom cover in a staggered manner. According to the spray header, through a distribution mode of the long jet nozzles and the short jet nozzles, the gas uniformity in a reaction cavity can be improved; the reaction rate is improved; reactants are prevented from depositing at the top to cause blockage of the nozzle; the crystal growth quality can be improved; the crystal yield is significantly improved; and the production cost is reduced.

Description

technical field [0001] The invention belongs to a gas spraying device, in particular to a spraying head used for MOCVD equipment, which realizes the isolation and uniform spraying of various gases. [0002] technical background [0003] Metal-organic compound chemical vapor deposition, its English name is Metal-organic Chemical VaporDeposition, abbreviated as MOCVD, is a new type of vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). Organic compounds of elements and hydrides of group V and VI elements are used as source materials for vapor deposition, and various III-V or II-VI compounds are grown on high-temperature substrates through diffusion, gas-phase reactions, and surface chemical reactions. Thin-layer single-crystal materials of semiconductors and their multicomponent solid solutions. Usually, the growth conditions of MOCVD are carried out under low pressure (1000-10000pa), and the carrier gas used for growth (usually N 2 or H...

AI Technical Summary

Problems solved by technology

[0005] The invention provides a shower head for MOCVD equipment, which solves the problem that the raw material gas cannot be mixed uniformly in the existing shower head, and at the same time reduces the problem of deposition blocking the nozzle on the top of the shower head

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